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Switching Transistor Transistor Price N Channel Switching Transistor Price

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N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss TO-252 Fetures Applications YJD130G04HHQ

US$ 0.12-1.26 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TO-252

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3400AQ

US$ 0.95 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package

US$ 0.219-0.239 / Piece

20 Pieces(MOQ)

Certification: RoHS, ISO

Shape: Through Hole

Function: Switch Transistor

Structure: Trench

Encapsulation Structure: Plastic Sealed Transistor

Power Level: High Power

Wuxi Goford Semiconductor Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

N-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3404AQ

US$ 0.92 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3401AQ

US$ 0.92 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

Ao4435 -30V P-Channel Mode Mosfet

US$ 0.05 / Piece

20000 Pieces(MOQ)

Certification: RoHS

Encapsulation Structure: Plastic Sealed Transistor

Installation: Plug-in Triode

Working Frequency: High Frequency

Power Level: High Power

Function: Switching Triode

Shenzhen Topmay Electronic Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss SOT-23 Fetures Applications YJL3415KCQ

US$ 0.86 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

P-Channel Enhancement Mode Field Effect Transistor Extremely low switching loss PDFN5060-8L Fetures Applications YJG25GP10AQ

US$ 0.85 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Power Level: High Power

Material: Silicon

Features1: Extremely Low Switching Loss

Dongguan Merry Electronic Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

P-Channel Enhancement Mode Field Effect Transistor High Speed switching SOT-23 Fetures Applications YJL3407AQ

US$ 0.79 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KDDWQ

US$ 0.18-1.31 / Piece

1 Piece(MOQ)

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Features4: Built-in ESD Diode

Application1: Switch Mode Power Supply (SMPS)

Application2: Power Factor Correction (Pfc)

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-23 Fetures Applications 2N7002KCQ

US$ 0.14-1.15 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Features4: Built-in ESD Diode

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-323 Fetures Applications 2N7002KDWHQ

US$ 0.18-1.16 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Structure: Planar

Encapsulation Structure: SOT-323

Power Level: High Power

Material: Silicon

Dongguan Merry Electronic Co., Ltd.

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor &mcy; &ocy; &pcy; -&tcy; &rcy; &acy; &ncy; &zcy; &icy; &scy; &tcy; &ocy; &rcy;

-40V -70A Nce40p70K Nce P-Channel Enhancement Mode Power Mosfet Transistor м о п -т р а н з и с т о р

US$ 0.19-0.219 / Piece

5000 Pieces(MOQ)

Manufacturing Technology: Discrete Device

Material: Element Semiconductor

Type: P-type Semiconductor

Package: SMD

Signal Processing: Analog Digital Composite and Function

Application: Power Switching Application

SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits

Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits

Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits

Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits

Irf9530n P-Channel Hexfet Power Mosfet to-220ab Transistor, Electronic Components, Integrated Circuits

US$ 0.13-0.2 / Piece

100 Pieces(MOQ)

Certification: RoHS

Encapsulation Structure: Plastic Sealed Transistor

Installation: Plug-in Triode

Working Frequency: Standard

Power Level: Standard

Function: Power Triode, Switching Triode

Yangjiang RUI XIAO Enterprise Co., Ltd.

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

High Power Current N-Channel Mode Mosfet Transistor Hy4008p/M/B/PS/Pm

US$ 0.25 / Piece

100 Pieces(MOQ)

Certification: RoHS

Shape: DIP

Shielding Type: Remote Cut-Off Shielding Tube

Cooling Method: Naturally Cooled Tube

Function: Mosfet Transistor

Encapsulation Structure: DIP

ShenZhen Nova Semiconductor Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

US$ 0.12-1.26 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Features4: Built-in ESD Diode

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation PDFN5060-8L Fetures Applications YJG60G10BQ

US$ 0.93 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) TO-263 Fetures Applications YJB150N06BQ

US$ 0.11-1.22 / Piece

1 Piece(MOQ)

Certification: RoHS

Encapsulation Structure: TO-263

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD50N06AQ

US$ 0.18-1.31 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TO-252

Power Level: High Power

Material: Silicon

Features1: Extremely Low Switching Loss

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD45G10AQ

US$ 0.11-1.22 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TO-252

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD90G06AQ

US$ 0.11-1.22 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TO-252

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

Ipp075n15n3g N-Channel Power MOS Power Transistor 60V 120A To220

US$ 0.8-1.5 / Piece

10 Pieces(MOQ)

Encapsulation Structure: Chip Transistor

Installation: Plug-in Triode

Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode

Structure: Diffusion

Channel Mode: Enhancement

Package / Box: to-220-3

Shenzhen Jin Da Peng Technology Co., Ltd.

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

Imported Chip Stf10nm60n New 600V10A To220f Switching Power Supply MOS Transistor

US$ 2.7-4 / Piece

10 Pieces(MOQ)

shape: Flat

Conductive Type: Enhanced

Integration: VLSI

Technics: Thick Film IC

Quality: Good

Operating Temperature: Standard

Shenzhen Jin Da Peng Technology Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG30N04AQ

US$ 0.88 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG60G04HHQ

US$ 0.89 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ3400AQ

US$ 0.91 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23-6L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

SIPMOS Small-Signal-Transistor N-Channel Fetures Applications Enhancement mode, Logic Level CCSEMI-BSS87

US$ 0.07-1 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: P-SOT89-4-2

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ69G04HHQ

US$ 0.84 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: DFN3333-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT225G04HJQ

US$ 0.75 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TOLL

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD27G10AQ

US$ 0.13-1.26 / Piece

1 Piece(MOQ)

Certification: RoHS

Encapsulation Structure: TO-252

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

N-Channel Enhancement Mode Field Effect Transistor Low RDS(on) & FOM TO-252 Fetures Applications YJD60G04HHQ

US$ 0.12-1.26 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: TO-252

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG200G04BRQ

US$ 0.93 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Power Level: High Power

Material: Silicon

Features1: Extremely Low Switching Loss

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation DFN3333-8L Fetures Applications YJQ35N04AQ

US$ 0.97 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Dongguan Merry Electronic Co., Ltd.

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

Original Fgh60n60ufdtu 20n60 40n60 40n65 60n60 60n65 IGBT 600V 120A 298W Transistor

US$ 3-5 / Piece

10 Pieces(MOQ)

Certification: RoHS, CE, ISO

Shape: -

Shielding Type: -

Cooling Method: -

Function: -

Structure: -

Shenzhen Hongjilong Technology Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG60N04AQ

US$ 0.95 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJGD30N04AQ

US$ 0.99 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL02N04AKHQ

US$ 0.81 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23-6L Fetures Applications YJJ05N06AQ

US$ 0.95 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23-6L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

US$ 0.032 / Piece

1000 Pieces(MOQ)

Encapsulation Structure: SOT-23

Application: Power Management Functions,motor control

Certification: RoHS, CE, ISO

Luminous Intensity: Standard

Color: Black

Structure: Planar

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 3 PDFN5060-8L Fetures Applications YJG110G10BQ

US$ 0.18-1.31 / Piece

1 Piece(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Power Level: High Power

Material: Silicon

Features1: Extremely Low Switching Loss

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

N-Channel Enhancement Mode Field Effect Transistor Excellent package for heat dissipation TOLL Fetures Applications YJT300G10AQ

US$ 0.71 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 TO-252 Fetures Applications YJD40N04AQ

US$ 0.18-1.19 / Piece

1 Piece(MOQ)

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Features4: Built-in ESD Diode

Application1: Switch Mode Power Supply (SMPS)

Application2: Power Factor Correction (Pfc)

Dongguan Merry Electronic Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

N-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 PDFN5060-8L Fetures Applications YJG180G04HJRQ

US$ 0.86 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: PDFN5060-8L

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

Imyh200r012m1hxksa1 Through Hole to-247-4 1 Channel 16.5 Mohms Transistors

US$ 0.001-0.1 / Piece

10 Pieces(MOQ)

Certification: RoHS, CE, ISO, CCC

Encapsulation Structure: Chip Transistor

Installation: SMD Triode

Working Frequency: Standard

Power Level: Standard

Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode

ShenZhen Nova Semiconductor Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

P-Channel Enhancement Mode Field Effect Transistor Low RDS(ON) Low Gate Charge SOT-323 Fetures Applications YJL2101WQ

US$ 0.86 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-323

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

P-Channel Enhancement Mode Field Effect Transistor Moisture Sensitivity Level 1 SOT-23 Fetures Applications YJL3407CQ

US$ 0.80 / Piece

1000 Pieces(MOQ)

Certification: RoHS

Function: Switch Transistor

Encapsulation Structure: SOT-23

Material: Silicon

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Dongguan Merry Electronic Co., Ltd.

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

Tt2076 Original TV Display Transistor 1500V 18A

US$ 0.79 / Piece

500 Pieces(MOQ)

Function: TV Transistor

Material: Silicon

Synchronous Rectifier: Yes

Channel Type: N Channel

Package Outline: SMD

Use: a / Broadband Zoom

Shenzhen Jin Da Peng Technology Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

N-Channel Enhancement Mode Field Effect Transistor Halogen Free TO-252 Fetures Applications YJD20N06AQ

US$ 0.18-1.31 / Piece

1 Piece(MOQ)

Features1: Extremely Low Switching Loss

Features2: Excellent Stability and Uniformity

Features3: 100% Avalanche Tested

Features4: Built-in ESD Diode

Application1: Switch Mode Power Supply (SMPS)

Application2: Power Factor Correction (Pfc)

Dongguan Merry Electronic Co., Ltd.

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