Transistor Icon

Main technical index
1 Y
1 Y axis deflection coefficient
(IC):10μA/div~0.5A/div15,±3%.
Collector current range (IC): 10 A/div ~ 0.5A/div 15, error no more than 3%.
(IR):0.2μA/div~5μA/div5
Diode reverse leakage current (IR): 0.2 A/div ~ 5 A/div 5 file
2 X
2 X axis deflection coefficient
(Vce):
Collector voltage range (Vce):
YB4810:0.05V/div~50V/div10,±3%
YB4810:0.05V/div ~ 50V/div 10 file, error no more than 3%
YB4811:0.05V/div~500V/div13,±3%
YB4811:0.05V/div ~ 500V/div 13 file, error no more than 3%
(Vbe):0.1V/div~5V/div6,±3%
Base voltage range (Vbe):0.1V/div ~ 5V/div 6, error no more than 3%
:0.05V/div,±3%
External input: 0.05V/div, error no more than 3%
3
3 step signal
(Ib): 0.1μA/~100mA/19
Step current range (Ib): 0.1 A/ - 100mA/ - - grade 19 - file
(Vb):0.1V/~2V/ 5,±5%
Step voltage range (Vb): 0.1V/ grade ~ 2V/ grade 5 file, error no more than 5%
:
Product features:
(1);
(1) a variety of characteristic curves for semiconductor devices;
(2);
(2) the static parameters of semiconductor devices;
(3),;
(3) the limiting parameter of a semiconductor device can be measured without damage to the device;
(4).
(4) dual cluster display of transistors.