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Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT pictures & photos

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What is Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT

Name: Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT
Uploaded: 2023-05-07T16:51:13+08:00
Description: General Description OST120N65HEMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent sw

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Price

Min. Order Reference FOB Price

800 Pieces US$0.20-0.60 / Piece

Sepcifications

Certification RoHS, ISO
Shape Metal Porcelain Tube
Shielding Type Sharp Cutoff Shielding Tube
Cooling Method Air Cooled Tube
Function Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Specification 35x30x37cm
Trademark Orientalsemi
Origin China

Product Description

General Description OST120N65HEMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters. ...

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Shanghai Winture Electric Co., Ltd.

Gold Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Main Products Mosfet Transistor Power Semi Conductor, EV Charger Power Mosfet Transistor Power Semi Co, High Voltage Super Junction Mosfet Trans Istor, New Energy Vehicle DC Charging Mosfet Transistor, 5g Base Station Power Supply Mosfet Transistor, Photovoltaic Inverter Mosfet Transistor, Energy Storage Mosfet Transistor, Data Center Server Mosfet Transistor, Industrial Lighting Power Mosfet, DC Charging Power Mosfet Tansistor
Registered Capital 10000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001, ISO 14001
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months

IGBT Comparison

	Quick View Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT Contact Now	Nce1579c Mosfet N-Channel Original Transistors Nce Enhancement Mode Power Mosfet Nce1579 Contact Now	Original Bipolar Transistor Nzt44h8 Nzt44 44h8 Contact Now	New and Original Transistor Irf1010epbf To220 Irf1010 to-220 F1010e Irf1010e Contact Now	Mosfet Transistor STP10nm60n Stf10nm60n 10nm60n Contact Now

Transaction Info
	Quick View Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT Contact Now	Nce1579c Mosfet N-Channel Original Transistors Nce Enhancement Mode Power Mosfet Nce1579 Contact Now	Original Bipolar Transistor Nzt44h8 Nzt44 44h8 Contact Now	New and Original Transistor Irf1010epbf To220 Irf1010 to-220 F1010e Irf1010e Contact Now	Mosfet Transistor STP10nm60n Stf10nm60n 10nm60n Contact Now
Price	US $ 0.20-0.60/ Piece	US $ 0.51-0.65/ Piece	US $ 0.598/ Piece	US $ 1.00-1.20/ Piece	US $ 2.695-3.17/ Piece
Min Order	800 Pieces	10 Pieces	250 Pieces	100 Pieces	500 Pieces
Trade Terms	-	FOB, CIF, EXW	FOB, CIF, EXW	FOB, CIF, EXW	FOB, CIF, EXW
Payment Terms	L/C, T/T	L/C, T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal	L/C, T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	-	RoHS	RoHS, CE, ISO, CCC	-
Management System Certification	ISO 9001, ISO 14001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: DIP; Material: Plastic and Copper; Product Number: Nce1579; Size / Dimensions: /; Warranty: 60day; Detailed Description: Nce N-Channel Enhancement Mode Power Mosfet;	Shape: ST; Function: High Back Pressure Transistor, Switch Transistor, Transistor; Encapsulation Structure: Chip Transistor; Material: Silicon; Description: Bipolar Transistors - Bjt NPN Power Transistor; Product Category: Transistor; Mounting Style: SMD/SMT; Transistor Polarity: NPN; Series: Nzt44h8; Continuous Collector Current: 8 a; Price: Pls Contact Our; Subcategory: Transistor;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Working Frequency: Low Frequency; Structure: Diffusion; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Germanium; Product Type: Transistor; Installation Style: /; Package / Case: /; Transistor Polarity: NPN; Operating Temperature: Standard; Supply Voltage: Single; Price: Pls Contact Our;	Shape: ST; Encapsulation Structure: Chip Transistor; Material: Germanium Transistors; Series: STP10nm60n; Product Type: Mosfet; Cpd-Power Dissipation: 70 W; Warranty: 60day; Package / Box: to-220-3; Number of Channels: 1 Channel; Vds-Drain Source Breakdown Voltage: 600; Transistor Type: 1 N-Channel; Configuration: Single with Built-in Diode; Fet Technology: Metal-Oxide Semiconductor; Pulsed Drain Current-Max (Idm): 32 a; Product Number: STP10nm60n; Description: Mosfet N-CH 600V 10A To220; Detailed Description: N-Channel 600V 10A (Tc) 70W (Tc) Through Hole; Package: Tube;
Supplier Name	Shanghai Winture Electric Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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