| Specification |
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Structure: NPN;
|
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Power Level: Medium Power;
Structure: NPN;
Material: Silicon;
Transistor Type: NPN;
Current - Collector (IC) (Max): 2 a;
Voltage - Collector Emitter Breakdown (M: 50 V;
Vce Saturation (Max) @ Ib, IC: 500mv @ 50mA, 1A;
Current - Collector Cutoff (Max): 100na (Icbo);
DC Current Gain (Hfe) (Min) @ IC, Vce: 70 @ 500mA, 2V;
Power - Max: 500 MW;
Operating Temperature: 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: to-243AA;
|
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Power Level: Medium Power;
Structure: Mosfet;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 50 V;
Current - Continuous Drain (ID) @ 25: 220mA (Ta);
Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V;
RDS on (Max) @ ID, Vgs: 3ohm @ 500mA, 10V;
Vgs(Th) (Max) @ ID: 1.6V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 2.4 Nc @ 10 V;
Vgs (Max): ±20V;
Input Capacitance (CISS) (Max) @ Vds: 27 PF @ 25 V;
Operating Temperature: 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: Sot-23-3;
Power Dissipation (Max): 350MW (Ta);
|
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: NPN;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Power Level: Medium Power;
Structure: NPN;
Material: Silicon;
Transistor Type: NPN;
Current - Collector (IC) (Max): 1.2 a;
Voltage - Collector Emitter Breakdown (M: 80 V;
Vce Saturation (Max) @ Ib, IC: 500mv @ 50mA, 500mA;
Current - Collector Cutoff (Max): 100na (Icbo);
DC Current Gain (Hfe) (Min) @ IC, Vce: 40 @ 150mA, 2V;
Power - Max: 1 W;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: Sot-223-4;
|
