Imyh200r012m1h

US$0.10-0.30 / Piece

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1200V/200A, IGBT Die 1200V/200A, IGBT Die From China with Good Price pictures & photos

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What is 1200V/200A, IGBT Die 1200V/200A, IGBT Die From China with Good Price

Name: 1200V/200A, IGBT Die 1200V/200A, IGBT Die From China with Good Price
Uploaded: 2023-12-07T11:57:14+08:00
Description: 1200V/200A, IGBT Die 1200V/200A, IGBT Die from China with good price Automotive IGBT & CoolSiC™ MOSFET Modules replacement automotive IGBT for Infineon FS380R12A6T4B FS200R07A02E3_S6 FS400R07A1

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About this Item

Price

Purchase Qty. Reference FOB Price

100-2,999 Pieces US$0.30

3,000-8,999 Pieces US$0.20

9,000+ Pieces US$0.10

Sepcifications

Application Industrial Devices
Batch Number 23+
Brand Maxi
Transport Package Carton Box
Specification Original
Trademark Original
Origin China
Name IGBT Module
Applications Energy Storage Systems
Lead Time 10-30days
Other Name IGBT Die

Product Description

1200V/200A, IGBT Die 1200V/200A, IGBT Die from China with good price Automotive IGBT &CoolSiC™ MOSFET Modules replacement automotive IGBT for Infineon FS380R12A6T4B FS200R07A02E3_S6 FS400R07A1E3_S7 62 mm 1200 V, 450 A dual low sat &fast trench IGBT module with TRENCHSTOP™ ...

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Emi International (Hk) Co. Ltd

Diamond Member Since 2022

Audited Supplier

Business Type Manufacturer/Factory
Main Products Intergrated Circuit, IC, Electronic Components, IC Chips, IGBT, Chips, MCU, Fpga, Semiconductors, Electronic Connectors
Registered Capital 5000000 RMB
Plant Area 501~1000 square meters
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: within 15 workdays

Imyh200r012m1h Comparison

	Quick View 1200V/200A, IGBT Die 1200V/200A, IGBT Die From China with Good Price Contact Now	3.0SMC8.2A 3.0SMC8.2CA Transient Voltage Suppressor Tvs Diode Contact Now	High Purity 150mm P Grade 150mm Silicon Carbide Ingot Sic Seed Wafer (Purity 99.9999%) Contact Now	Quick View 3.0SMC9.1A 3.0SMC9.1CA Transient Voltage Suppressor Tvs Diode Contact Now	P Grade 4 Inch 6 Inch 8 Inch Sic Silicon Carbide Wafer Sic Wafer for Semi Conductor Contact Now

Transaction Info
	Quick View 1200V/200A, IGBT Die 1200V/200A, IGBT Die From China with Good Price Contact Now	3.0SMC8.2A 3.0SMC8.2CA Transient Voltage Suppressor Tvs Diode Contact Now	High Purity 150mm P Grade 150mm Silicon Carbide Ingot Sic Seed Wafer (Purity 99.9999%) Contact Now	Quick View 3.0SMC9.1A 3.0SMC9.1CA Transient Voltage Suppressor Tvs Diode Contact Now	P Grade 4 Inch 6 Inch 8 Inch Sic Silicon Carbide Wafer Sic Wafer for Semi Conductor Contact Now
Price	US $ 0.10-0.30/ Piece	Negotiable	US $ 2,100.00-2,240.00/ Piece	Negotiable	US $ 1,200.00-1,300.00/ Piece
Min Order	100 Pieces	1000000 Pieces	2 Pieces	1000000 Pieces	2 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal, CNY Account	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal, CNY Account
Quality Control
Management System Certification	ISO 9001	ISO 9001	-	ISO 9001	-
Trade Capacity
Export Markets	North America, Eastern Europe, Eastern Asia, Western Europe	North America, Eastern Europe, Africa, Mid East, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Eastern Europe, Africa, Mid East, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Others	OEM	ODM	OEM	ODM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1-3 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Application: Industrial Devices; Batch Number: 23+; Brand: Maxi; Name: IGBT Module; Applications: Energy Storage Systems; Lead Time: 10-30days; Other Name: IGBT Die;	Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: P-N Type; Package: SMC; Signal Processing: Analog Digital Composite and Function; Application: Electronic Product; Model: 3.0SMC8.2A 3.0SMC8.2CA; Batch Number: 2022+; Brand: Made in China;	Manufacturing Technology: Chemical Vapor Deposition; Material: Sic; Type: N-type Semiconductor; Package: Custom; Signal Processing: No; Application: Semiconductor; Model: 4h-N; Batch Number: No; Brand: No; Grade: P & D Grade; Spec: 4 Inches 6 Inches etc; Raw Material: 6n Sic; Types: N or Si;	Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: P-N Type; Package: SMC; Signal Processing: Analog Digital Composite and Function; Application: Electronic Product; Model: 3.0SMC9.1A 3.0SMC9.1CA; Batch Number: 2022+; Brand: Made in China;	Manufacturing Technology: Chemical Vapor Deposition; Material: Sic; Type: N-type Semiconductor; Package: Custom; Signal Processing: No; Application: Semiconductor; Model: 4h-N; Batch Number: No; Brand: No; Grade: P & D Grade; Spec: 4 Inches 6 Inches etc; Raw Material: 6n Sic; Types: N or Si;
Supplier Name	Emi International (Hk) Co. Ltd	Kunshan Huateng Electronics Co., Ltd.	Hebei Baotong New Material Technology Co., Ltd.	Kunshan Huateng Electronics Co., Ltd.	Hebei Baotong New Material Technology Co., Ltd.
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