Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC pictures & photos

Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC

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Price

Min. Order Reference FOB Price

20 Pieces US$0.219-0.239 / Piece

Sepcifications

Certification RoHS, ISO, SGS
Function Switch Transistor
Structure Planar
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification TO-220 package
Trademark GOFORD
Origin China
Spq 50PCS/Tube
Lead Time 4~6 Weeks

Product Description

MOSFET IRFP150N Replacement G50N10 100V 50A TO-220 for DC/DC General Description The G50N10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features High power and current ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Comparison

	Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=650V IF=22A QC=62nC fetures applications High-frequency operation YJD106520DQG2 Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=3.8A QC=14nC fetures applications High-frequency operation YJD112002DG1 Contact Now	Quick View Original Transistor Bss123nh6327xtsa1 to-236-3 Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irf7456trpbf 20V 16A 2.5W 6.5mΩ @10V, 16A N Channel Soic-8 Mosfets RoHS Bom Service Contact Now

Transaction Info
	Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=650V IF=22A QC=62nC fetures applications High-frequency operation YJD106520DQG2 Contact Now	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=3.8A QC=14nC fetures applications High-frequency operation YJD112002DG1 Contact Now	Quick View Original Transistor Bss123nh6327xtsa1 to-236-3 Mosfets RoHS Bom Service Contact Now	Quick View Original Transistor Irf7456trpbf 20V 16A 2.5W 6.5mΩ @10V, 16A N Channel Soic-8 Mosfets RoHS Bom Service Contact Now
Price	US $ 0.219-0.239/ Piece	US $ 0.77/ Piece	US $ 0.73/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	1000 Pieces	1000 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO, SGS	RoHS	RoHS	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	-	-	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM, ODM	OEM, ODM	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-
Product Attributes
Specification	Function: Switch Transistor; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 50PCS/Tube; Lead Time: 4~6 Weeks;	Function: Switch Transistor; Encapsulation Structure: TO-252; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Function: Switch Transistor; Encapsulation Structure: TO-252; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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