Aon6266e Alternative Part Gt55n06 60V 53A Power Supply Transistor Mosfet Video

Name: Aon6266e Alternative Part Gt55n06 60V 53A Power Supply Transistor Mosfet
Uploaded: 2021-03-19T10:53:08+08:00
Description: Product Description AON6266E alternative part GT55N06 60V 53A power supply transistor mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric fie

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About this Item

Price

Min. Order Reference FOB Price

20 Pieces US$0.129-0.219 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Sgt
Encapsulation Structure Plastic Sealed Transistor
Power Level High Power
Material Silicon
Transport Package Reel, with Antistatic Alluminum Foil Bag
Trademark GOFORD
Origin China
Vdss 60V
ID 53A
RDS 6.8 Mr
Pd 70W
Package Dfn5*6
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 3000PCS/Reel

Product Description

Product Description AON6266E alternative part GT55N06 60V 53A power supply transistor mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better Rdson. Part Number GT55N06 VDSS 60V ID 53A RDS 6.8 ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Power Mosfet Comparison

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Transaction Info
	Quick View Aon6266e Alternative Part Gt55n06 60V 53A Power Supply Transistor Mosfet Contact Now	Quick View Boost Pfc Vds 650V RDS38mΩ Fast Recovery Diode High Voltage Regulator Mosfet Contact Now	Quick View Boost Pfc Telecom Power Vds 650V High Voltage Regulator Mosfet Contact Now	Quick View Telecom Power Fast Recovery Diode Contact Now	Quick View Aec-Q101 Low Driving Voltage 40V Fast Switching Low RDS (on Mosfet Contact Now
Price	US $ 0.129-0.219/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece	US $ 0.2/ Piece
Min Order	20 Pieces	660 Pieces	660 Pieces	660 Pieces	660 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T	T/T	T/T	T/T
Quality Control
Product Certification	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	ISO 9001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Sgt; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Vdss: 60V; ID: 53A; RDS: 6.8 Mr; Pd: 70W; Package: Dfn56;* Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting; Application: Car Inverter;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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