Factory Direct Dual N Mosfet Transistor G09n06s2 60V 6A Sop-8

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

20 Pieces US$0.01-9.90 / Piece

Sepcifications

  • Certification RoHS, ISO, ISO9001
  • Function Switch Transistor
  • Structure Trench
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level Medium Power
  • Material Plastic
  • Transport Package Carton
  • Specification SOP-8 package
  • Trademark GOFORD
  • Origin China
  • Spq 4000PCS/Reel
  • Lead Time 4~6 Weeks

Product Description

Factory Direct Dual N Mosfet Transistor G09N06S2 60V 6A SOP-8 General Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 60V ID (at VGS = -10V)9A RDS(ON) (at ...

Learn More

Dual N Mosfet Comparison
Transaction Info
Price US $ 0.01-9.90/ Piece US $ 0.10-0.50/ Piece US $ 1/ Piece US $ 0.10-0.50/ Piece US $ 0.3646-0.4223/ Piece
Min Order 20 Pieces 1 Pieces 1 Pieces 1 Pieces 3000000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS, ISO, ISO9001 - RoHS - RoHS, CE, ISO, CCC, UL
Management System Certification ISO 9001 GMP GMP GMP -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Domestic
Annual Export Revenue - - - - -
Business Model Own Brand OEM OEM OEM -
Average Lead Time Off-season: 1 Month(s) - - - -
Product Attributes
Specification
Function: Switch Transistor;
Structure: Trench;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Plastic;
Spq: 4000PCS/Reel;
Lead Time: 4~6 Weeks;
Shielding Type: Remote Cut-Off Shielding Tube;
Brand: No Brand;
Cooling Method: Naturally Cooled Tube;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
IGBT Type: IGBT Module;
Collector Cutoff Current: 1mA;
Collector-Emitter Voltage: 1200V;
Gate-Emitter Voltage: ±20V;
Maximum Collector Dissipation: 390W;
Shielding Type: Remote Cut-Off Shielding Tube;
Brand: No Brand;
Shape: Metal Porcelain Tube;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Small Power;
Material: Silicon;
Maximum Repetitive Peak Reverse Voltage: 45V;
Maximum RMS Voltage: 31.5V;
Maximum DC Blocking Voltage: 45V;
Maximum Average Forward Rectified Curren: 50A;
Case: QC3q, Molded Plastic Body Molding Compound;
Terminal: Mattle Tin Plated Leads,Solderable Per Jesd22-B102;
Weight: 4.9g;
Supplier Name

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Guangdong Juxing Electronics Technology Co., Ltd

China Supplier - Diamond Member Audited Supplier