SMD Mosfet Transistor Sot-23-3L 60V 5A Mosfet for LED Lighting pictures & photos

SMD Mosfet Transistor Sot-23-3L 60V 5A Mosfet for LED Lighting

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Price

Min. Order Reference FOB Price

20 Pieces US$0.03-0.04 / Piece

Sepcifications

Certification RoHS, ISO, ISO9001
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Small Power
Material Plastic
Transport Package Carton
Specification SOT-23-3L package
Trademark GOFORD
Origin China
Spq 3000 PCS/ Reel
Lead Time 4~6 Weeks

Product Description

SMD Mosfet Transistor 06N06L SOT-23-3L 60V 5A for LED Lighting General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features High power and current ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

SMD Mosfet Comparison

	SMD Mosfet Transistor Sot-23-3L 60V 5A Mosfet for LED Lighting Contact Now	Bd681 Bd681g Bd682 Bd680 4A 100V Bipolar Power NPN Transistors Contact Now	Quick View New Original Fga15n120 Transistor Fga15n120antd Contact Now	Quick View Original High Quality Standard Thyristor Bt151 Transistors Contact Now	Quick View N-Channel Mosfet Irf644n Irf644 14A/250V Field-Effect Transistor Contact Now

Transaction Info
	SMD Mosfet Transistor Sot-23-3L 60V 5A Mosfet for LED Lighting Contact Now	Bd681 Bd681g Bd682 Bd680 4A 100V Bipolar Power NPN Transistors Contact Now	Quick View New Original Fga15n120 Transistor Fga15n120antd Contact Now	Quick View Original High Quality Standard Thyristor Bt151 Transistors Contact Now	Quick View N-Channel Mosfet Irf644n Irf644 14A/250V Field-Effect Transistor Contact Now
Price	US $ 0.03-0.04/ Piece	US $ 0.10-0.50/ Piece	US $ 0.10-0.20/ Piece	US $ 0.99/ Piece	US $ 0.04-1.95/ Piece
Min Order	20 Pieces	10 Pieces	500 Pieces	100 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO, ISO9001	RoHS	RoHS	RoHS	RoHS
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Plastic; Spq: 3000 PCS/ Reel; Lead Time: 4~6 Weeks;	Shape: ST; Shielding Type: /; Cooling Method: /; Function: High Back Pressure Transistor, Microwave Transistor; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Quality: Good; Installation Type: Patch; Lead Free Status: RoHS Compliant; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;	Shape: ST; Function: Transistor; Working Frequency: High Frequency; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Product Category: IGBT Transistor; Description: IGBT Transistor; Product Number: Fga15n120antd; Category: Transistors; Package: Tube; Mounting Style: Through Hole; Base Product Number: Fga15; Collector- Emitter Voltage Vceo Max: 1200 V; Series: Fga15n120antd; Continuous Collector Current IC Max: 30; Subcategory: IGBT; Collector-Emitter Saturation Voltage: 2.4 V;	Shape: ST; Shielding Type: /; Cooling Method: /; Function: Switch Transistor, SCR; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Description: SCR 800V 12A; Product Number: Bt151-800r; Detailed Description: SCR Standard Recovery Through; Category: Thyristors - Scrs; Package: Tube; Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A; Voltage - off State: 800 V; Product: Bt151;	Shape: DIP; Shielding Type: /; Cooling Method: /; Working Frequency: High Frequency; Structure: /; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Fet Technology: Metal-Oxide Semiconductor; Product Category: Mosfet; Transistor Polarity: N-Channel; Series: Irf; Subcategory: Mosfets;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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