18n20 200V 18A Mosfet Transistor for Ripple Remover Application pictures & photos

18n20 200V 18A Mosfet Transistor for Ripple Remover Application

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About this Item

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Certification RoHS, ISO
Shape Through Hole
Function Switch Transistor
Structure Planar
Encapsulation Structure Plastic Sealed Transistor
Power Level High Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss 200V
ID 18A
RDS 136 Mr
Pd 110 W
Package to-220
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 50PCS/Tube

Product Description

Product Description 18N20 200V 18A MOSFET Transistor for ripple remover application Part Number 18N20 VDSS 200V ID 18A RDS 136mΩ @ vgs=10V Vth 1~3V Package TO-220 Ciss 836 pF Crss 3.8 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Ifr640 Mosfet Comparison

	18n20 200V 18A Mosfet Transistor for Ripple Remover Application Contact Now	High Frequency Heating Machine Ceramic Vacuum Electron Tube Itl9-1 Contact Now	High Frequency Vacuum Heating Power Triode (ITL15-2, ITL12-1) Contact Now	Metal Ceramic Heating Tube Electronic Triode (ITK60-2, ITK30-2) Contact Now	Electron Tube Itk12-1 Contact Now

Transaction Info
	18n20 200V 18A Mosfet Transistor for Ripple Remover Application Contact Now	High Frequency Heating Machine Ceramic Vacuum Electron Tube Itl9-1 Contact Now	High Frequency Vacuum Heating Power Triode (ITL15-2, ITL12-1) Contact Now	Metal Ceramic Heating Tube Electronic Triode (ITK60-2, ITK30-2) Contact Now	Electron Tube Itk12-1 Contact Now
Price	Negotiable	US $ 950.00-1,100.00/ Piece	US $ 2,600.00-3,300.00/ Piece	US $ 5,000.00-6,000.00/ Piece	US $ 1,000.00-2,500.00/ Piece
Min Order	100 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	FOB, CIF, EXW	FOB, CIF, EXW	FOB, CIF, EXW	-
Payment Terms	T/T, Paypal	L/C, Western Union, Paypal	L/C, T/T, Paypal	L/C, T/T, Paypal	L/C, T/T, Western Union, Money Gram
Quality Control
Product Certification	RoHS, ISO	-	-	-	-
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Annual Export Revenue	-	> US $100 Million	> US $100 Million	> US $100 Million	-
Business Model	Own Brand	OEM, ODM	OEM, ODM	OEM, ODM	-
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: Through Hole; Function: Switch Transistor; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: High Power; Material: Silicon; Vdss: 200V; ID: 18A; RDS: 136 Mr; Pd: 110 W; Package: to-220; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 50PCS/Tube;	Shape: Metal Ceramic; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Encapsulation Structure: Other; Power Level: High Power; Material: Metal Ceramic; Filament Voltage: 5.8V; Filament Current: 145A; Amplifcation Factor: 22; Max Power: 25kw; Working Position: Vertical; Max Height: 220.5mm; Max Diameter: 145mm; Max Weight: 4.4kg; Cooling: Forced Air;	Shape: Metal Ceramic; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Encapsulation Structure: Other; Power Level: High Power; Material: Metal Ceramic; Filament Voltage: 5.8V; Filament Current: 145A; Amplifcation Factor: 22; Max Power: 25kw; Working Position: Vertical; Max Height: 220.5mm; Max Diameter: 145mm; Max Weight: 4.4kg; Cooling: Forced Air;	Shape: Metal Ceramic; Cooling Method: Water Cooled Tube; Working Frequency: High Frequency; Encapsulation Structure: Other; Power Level: High Power; Material: Metal Ceramic; Filament Voltage: 11V; Filament Current: 240A; Amplifcation Factor: 23; Max Power: 130kw; Working Position: Vertical; Max Height: 373mm; Max Diameter: 200.5mm; Max Weight: 10.3kg; Cooling: Water;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Water Cooled Tube; Function: High Frequency Generator for Oscillator; Working Frequency: High Frequency; Structure: Metal- Ceramic; Encapsulation Structure: Metal- Ceramic; Power Level: High Power; Material: Metal- Ceramic;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Ningbo Setec Electron Co., Ltd.	Beijing Jenerator Electronic Co.,Ltd
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