P-Channel Mosfet Transistor Manufacturers for Load Switch pictures & photos

P-Channel Mosfet Transistor Manufacturers for Load Switch

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Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

Certification RoHS, ISO
Power Level Small Power
Function Switch Transistor
Structure Trench
Material Silicon
Trademark GOFORD
Origin China
Vds -12V
ID -16A
RDS 17 MΩ @ Vgs=10V
Vth -0.7V
Package Sop-8
CISS 1740PF
Crss 200PF

Product Description

P-Channel Mosfet transistor manufacturers for load switch Part Number 6616A VDSS -12 V ID -16 A RDS 17 mΩ @ vgs=10V Vth -0.7V Package SOP-8 Ciss 1740 pF Crss 200 pF Datasheet You may like For more products details, please contact us ! Packaging &Shipping 1. The ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Mosfet Switch Comparison

	P-Channel Mosfet Transistor Manufacturers for Load Switch Contact Now	Quick View Original Mosfet Irfsl3306pbf N-Channel 60 V 120A 230W Through Hole to-262 Irfsl3306 Contact Now	Quick View Original STP55NF06 Mosfet N-Channel 60 V 50A 110W Through Hole to-220 STP55 Contact Now	Quick View Original Bcm847BS135 Bipolar Transistor Array 2NPN Matched Pair 45V 100mA 250MHz Bcm847 Contact Now	Quick View Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640 Contact Now

Transaction Info
	P-Channel Mosfet Transistor Manufacturers for Load Switch Contact Now	Quick View Original Mosfet Irfsl3306pbf N-Channel 60 V 120A 230W Through Hole to-262 Irfsl3306 Contact Now	Quick View Original STP55NF06 Mosfet N-Channel 60 V 50A 110W Through Hole to-220 STP55 Contact Now	Quick View Original Bcm847BS135 Bipolar Transistor Array 2NPN Matched Pair 45V 100mA 250MHz Bcm847 Contact Now	Quick View Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640 Contact Now
Price	Negotiable	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	100 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union	T/T, Western Union	T/T, Western Union	T/T, Western Union
Quality Control
Product Certification	RoHS, ISO	ISO	ISO	ISO	ISO
Management System Certification	ISO 9001	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Power Level: Small Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vds: -12V; ID: -16A; RDS: 17 MΩ @ Vgs=10V; Vth: -0.7V; Package: Sop-8; CISS: 1740PF; Crss: 200PF;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4520 PF @ 50 V; Power Dissipation (Max): 230W (Tc); Operating Temperature: -55°c ~ 175°c (Tj);	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4520 PF @ 50 V; Power Dissipation (Max): 230W (Tc); Operating Temperature: -55°c ~ 175°c (Tj);	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Switching Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Transistor Type: 2 NPN (Dual) Matched Pair; Current - Collector (IC) (Max): 100mA; Vce Saturation (Max) @ Ib, IC: 400mv @ 5mA, 100mA; Current - Collector Cutoff (Max): 15na (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 200 @ 2mA, 5V; Power - Max: 300MW;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; RDS on (Max) @ ID, Vgs: 150mohm @ 11A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Vgs (Max): ±20V;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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