Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640 Video

Name: Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640
Uploaded: 2023-10-08T14:07:40+08:00
Description: Original IRF640NLPBF MOSFET N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262 IRF640 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs M

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Price

Min. Order Reference FOB Price

1 Piece US$0.10 / Piece

Sepcifications

Certification ISO
Encapsulation Structure Chip Transistor
Installation SMD Triode
Working Frequency Overclocking
Power Level High Power
Function Power Triode
Structure Diffusion
Material Germanium
Transport Package N/a
Specification SMD
Trademark N/A
Origin Original
Package Tray
Product Status Active
Fet Type N-Channel
Technology Mosfet (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
RDS on (Max) @ ID, Vgs 150mohm @ 11A, 10V
Vgs(Th) (Max) @ ID 4V @ 250µa
Vgs (Max) ±20V

Product Description

Original IRF640NLPBF MOSFET N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262 IRF640 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr International Rectifier Series HEXFET® Package Bulk Product Status Active FET ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(7 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Irf9640pbf Comparison

	Quick View Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640 Contact Now	Quick View Juxing 2sc3356 20V0.1A Plastic Encapsulate Transistor with Sot-23 Package Contact Now	Quick View Juxing S9013 40V500mA Sot-23 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing D882 40V3a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing Bcx56 100V1a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now

Transaction Info
	Quick View Original Irf640nlpbf Mosfet N-Channel 200 V 18A 150W Through Hole to-262 Irf640 Contact Now	Quick View Juxing 2sc3356 20V0.1A Plastic Encapsulate Transistor with Sot-23 Package Contact Now	Quick View Juxing S9013 40V500mA Sot-23 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing D882 40V3a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now	Quick View Juxing Bcx56 100V1a Sot-89 Plastic-Encapsulate Switching Transistors (NPN) Contact Now
Price	US $ 0.1/ Piece	US $ 0.0183-0.0286/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0486/ Piece	US $ 0.0183-0.0486/ Piece
Min Order	1 Pieces	3000 Pieces	3000 Pieces	3000 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	ISO	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Domestic	Domestic	Domestic	Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	-	-	-	-
Average Lead Time	-	-	-	-	-
Product Attributes
Specification	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Working Frequency: Overclocking; Power Level: High Power; Function: Power Triode; Structure: Diffusion; Material: Germanium; Package: Tray; Product Status: Active; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; RDS on (Max) @ ID, Vgs: 150mohm @ 11A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Vgs (Max): ±20V;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: Low Frequency; Power Level: Medium Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 20V; V CEO: 50V; V Ebo: 5V; Package: Sot-23; Case: Molded Plastic; I C: 0.1A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 40V; V CEO: 25V; V Ebo: 5V; Package: Sot-23; Case: Molded Plastic; I C: 500mA;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 40V; V CEO: 30V; V Ebo: 5V; Package: Sot-89; Case: Molded Plastic; I C: 3A;	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Working Frequency: Low Frequency; Power Level: Small Power; Function: Power Triode, Switching Triode; Structure: Planar; Material: Silicon; V Cbo: 100V; V CEO: 80V; V Ebo: 5V; Package: Sot-89; Case: Molded Plastic; I C: 1A;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd	Guangdong Juxing Electronics Technology Co., Ltd
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