G33n03D3 Mosfet 30V 33A Dfn3.3*3.3-8L for Fast Charge Application

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces Negotiable

Sepcifications

  • Trademark Goford
  • Origin China
  • Manufacturing Technology Discrete Device
  • Type N-type Semiconductor
  • Brand Goford

Product Description

Product Description G33N03D3 30V 33A DFN3.3*3.3-8L packaging Mosfet (electronic components distributor) Part Number G33N03D3 VDSS 30V ID 33A RDS 11mΩ @vgs=4.5V 10mΩ @vgs=10V Vth 0.66V Package DFN3.3*3.3-8L Ciss 938 pF Crss 99 pF Datasheet You may like For more ...

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ISO9001 Comparison
Transaction Info
Price Negotiable US $ 0.01-1.50/ Piece US $ 0.01-1.50/ Piece Negotiable US $ 0.052/ Piece
Min Order 100 Pieces 5000 Pieces 5000 Pieces 5000 Pieces 5000 Pieces
Trade Terms - - - - -
Payment Terms T/T, Paypal L/C, T/T L/C, T/T L/C, T/T L/C, T/T
Quality Control
Product Certification - - - - RoHS
Management System Certification ISO 9001 ISO 9001, ISO 14001, IATF16949 ISO 9001, ISO 14001, IATF16949 ISO 9001, ISO 14001, IATF16949 ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue - - - - -
Business Model Own Brand Own Brand Own Brand Own Brand Own Brand
Average Lead Time Off-season: 1 Month(s) Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Product Attributes
Specification
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Brand: Goford;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Silicon;
Package: to-252;
Application: Power Charger;
Model: Bt137;
Batch Number: 2023;
Brand: Wxdh;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Silicon;
Package: to-220f;
Application: Power Charger;
Model: Bt151X;
Batch Number: 2021;
Brand: Wxdh;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Metal-Oxide Semiconductor;
Package: to-251b;
Application: Power Switching Circuit;
Batch Number: 2022;
Brand: Wxdh;
Model: B5n20;
Application: Power Charger;
Batch Number: 2023;
Manufacturing Technology: Discrete Device;
Material: Silicon;
Model: Bt136;
Package: to-220m;
Type: N-Type Semiconductor;
Voltage: 600V;
Current: 4A;
Supplier Name

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

Jiangsu Donghai Semiconductor Co.,Ltd

China Supplier - Diamond Member Audited Supplier

Jiangsu Donghai Semiconductor Co.,Ltd

China Supplier - Diamond Member Audited Supplier

Jiangsu Donghai Semiconductor Co.,Ltd

China Supplier - Diamond Member Audited Supplier

Jiangsu Donghai Semiconductor Co.,Ltd

China Supplier - Diamond Member Audited Supplier