Irf630npbf Mosfet

US$0.077-0.12 / Piece

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Free Sample Mosfet Irf630npbf Equivalent Transistor 200V 9A N-Channel Mosfet pictures & photos

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What is Free Sample Mosfet Irf630npbf Equivalent Transistor 200V 9A N-Channel Mosfet

Name: Free Sample Mosfet Irf630npbf Equivalent Transistor 200V 9A N-Channel Mosfet
Uploaded: 2022-05-24T17:30:34+08:00
Description: Product Description Free Sample Mosfet IRF630NPBF Equivalent Transistor 200V 9A N-channel Mosfet Part Number 630A VDSS 200V ID 9A RDS 210mΩ @ vgs=10V Vth 1.6V Package TO-252 Ciss 509 pF Crss 3.

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Price

Min. Order Reference FOB Price

20 Pieces US$0.077-0.12 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Silicon
Transport Package Carton
Trademark GOFORD
Origin China
Vdss 200V
ID 9A
RDS 210 Mr
Pd 83W
Package to-252
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 2500PCS/Tube

Product Description

Product Description Free Sample Mosfet IRF630NPBF Equivalent Transistor 200V 9A N-channel Mosfet Part Number 630A VDSS 200V ID 9A RDS 210mΩ @ vgs=10V Vth 1.6V Package TO-252 Ciss 509 pF Crss 3.2 pF Datasheet You may like For more products details, please contact us ! ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Irf630npbf Mosfet Comparison

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Transaction Info
	Quick View Free Sample Mosfet Irf630npbf Equivalent Transistor 200V 9A N-Channel Mosfet Contact Now	Quick View Original Integrated Circuits Stth1r06 1.7V@1A 45ns 1A 600V Do-41 Fast Recovery/High Efficiency Diode RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Mmsd4148t1g 100V 425MW Single 1V@10mA 4ns 200mA SOD-123 Switching Diode RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Stth1r06A 1.7V@1A 30ns 1A 600V SMA Fast Recovery/High Efficiency Diode RoHS Bom Service Contact Now	Quick View Original Integrated Circuits Bas40lt1g 40V 1V@40mA 120mA Sot-23 Schottky Barrier Diodes (SBD) RoHS Bom Service Contact Now
Price	US $ 0.077-0.12/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece	US $ 0.1/ Piece
Min Order	20 Pieces	10 Pieces	10 Pieces	10 Pieces	10 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Product Certification	RoHS, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO	RoHS, CE, ISO
Management System Certification	ISO 9001	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	-	-	-	-
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Vdss: 200V; ID: 9A; RDS: 210 Mr; Pd: 83W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 2500PCS/Tube;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Hongjilong Technology Co., Ltd.
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