N and P Channel Enhancement Mode 40V Power Mosfet pictures & photos

N and P Channel Enhancement Mode 40V Power Mosfet

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Price

Min. Order Reference FOB Price

20 Pieces US$0.136-0.139 / Piece

Sepcifications

Certification RoHS, ISO
Shape SMD
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Silicon
Transport Package Reel, with Antistatic Alluminum Foil Bag
Trademark GOFORD
Origin China
Vdss 40V
ID 8A
RDS 28 Mr
Pd 2W
Package Sop-8
Stock in Stock
Sample Available
Lead Free Status Pb-Free
Spq 2500PCS/Reel
Configuration N+P Channel

Product Description

Product Description N and P Channel Enhancement Mode 40V Power MOSFET Part Number G4616 VDSS 40V ID 8A RDS 28mΩ @ vgs=4.5V Vth 1~1.5~2.5V Package SOP-8 Ciss 415pF Crss 122 pF Datasheet You may like For more products details, please contact us ! Packaging &...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

Electronic Component Comparison

	N and P Channel Enhancement Mode 40V Power Mosfet Contact Now	Quick View IGBT Modules Low inductance High short circuit capability(10us) IC 100A VCES 1200V Fetures Applications MG100HF12TLC1 Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 20 Amperes GBU2006 GBU Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 25 Amperes GBU2510 GBU Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 35 Amperes GBJ3510 GBJ Contact Now

Transaction Info
	N and P Channel Enhancement Mode 40V Power Mosfet Contact Now	Quick View IGBT Modules Low inductance High short circuit capability(10us) IC 100A VCES 1200V Fetures Applications MG100HF12TLC1 Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 20 Amperes GBU2006 GBU Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 25 Amperes GBU2510 GBU Contact Now	Quick View Glass Passivated Bridge Rectifiers Reverse Voltage - 50 to 1000 Volts Forward Current - 35 Amperes GBJ3510 GBJ Contact Now
Price	US $ 0.136-0.139/ Piece	US $ 0.16-1.22/ Piece	US $ 0.099/ Piece	US $ 0.124/ Piece	US $ 0.204/ Piece
Min Order	20 Pieces	1 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, ISO	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Vdss: 40V; ID: 8A; RDS: 28 Mr; Pd: 2W; Package: Sop-8; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 2500PCS/Reel; Configuration: N+P Channel;	Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: GBU; Shielding Type: GBU; Cooling Method: GBU; Working Frequency: GBU; Structure: GBU; Encapsulation Structure: GBU; Power Level: GBU; Material: metal; Feature1: Glass passivated chip; Feature2: Low forward voltage drop; Feature3: Ideal for printed circuit board; Feature4: High surge current capability; Mechanical Data1: Polarity: Symbol marked on body; Mechanical Data2: Mounting position: Any; Applications: General purpose use in AC/DC bridge full wave rect;	Shape: GBU; Shielding Type: GBU; Cooling Method: GBU; Function: rectify; Working Frequency: GBU; Structure: GBU; Encapsulation Structure: GBU; Power Level: GBU; Material: metal; Feature1: Glass passivated chip; Feature2: Low forward voltage drop; Feature3: Ideal for printed circuit board; Feature4: High surge current capability; Mechanical Data1: Polarity: Symbol marked on body; Mechanical Data2: Mounting position: Any; Applications: General purpose use in AC/DC bridge full wave rect;	Shape: GBJ3510; Shielding Type: GBJ3510; Cooling Method: GBJ3510; Function: rectify; Working Frequency: GBJ3510; Structure: GBJ; Encapsulation Structure: GBJ; Power Level: GBJ; Material: metal; Feature1: Glass passivated chip; Feature2: Low forward voltage drop; Feature3: Ideal for printed circuit board; Feature4: High surge current capability; Mechanical Data1: Polarity: Symbol marked on body; Mechanical Data2: Mounting position: Any;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
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