LED Power Supply Application 60n04 40V 60A To252 N Mosfet pictures & photos

LED Power Supply Application 60n04 40V 60A To252 N Mosfet

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Price

Min. Order Reference FOB Price

20 Pieces US$0.085-0.10 / Piece

Sepcifications

Certification RoHS, ISO
Function Switch Transistor
Structure Trench
Encapsulation Structure Plastic Sealed Transistor
Power Level Medium Power
Material Plastic
Transport Package Carton
Specification TO-252 package
Trademark GOFORD
Origin China
Spq 2500/Reel
Lead Time 4~6 Weeks

Product Description

LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS 60A ID (at VGS = -10V) 40A RDS(ON) (at VGS = ...

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Wuxi Goford Semiconductor Co., Ltd.

Gold Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Consumer Electronics, Electrical & Electronics
Main Products Mosfet, Transistor, Semiconductor, Power Transistor, Power Mosfet, Super Junction Mosfet, Mosfet Transistor, Super Junction, Electronic Component
Management System Certification ISO 9001
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, CFR, CIF, EXW

N Mosfet Comparison

	LED Power Supply Application 60n04 40V 60A To252 N Mosfet Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now	Quick View N-Channel 200V 9.3A SMD D2pak Irf630nstrlpbf Mosfet Transistor Hexfet Series Contact Now	Quick View CSD19505 Mosfet Single Transistor CSD19502 CSD19503 CSD19506 Contact Now

Transaction Info
	LED Power Supply Application 60n04 40V 60A To252 N Mosfet Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now	Quick View N-Channel 200V 9.3A SMD D2pak Irf630nstrlpbf Mosfet Transistor Hexfet Series Contact Now	Quick View CSD19505 Mosfet Single Transistor CSD19502 CSD19503 CSD19506 Contact Now
Price	US $ 0.085-0.10/ Piece	US $ 0.001-0.10/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece	US $ 0.8/ Piece
Min Order	20 Pieces	1 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, ISO	-	-	-	-
Management System Certification	ISO 9001	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Plastic; Spq: 2500/Reel; Lead Time: 4~6 Weeks;	Shape: Through Hole; Function: Mosfet; Encapsulation Structure: Chip Transistor; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Continuous Drain (ID) @ 25°c: 5.6A (Tc); Drive Voltage: 4V, 5V; RDS on (Max) @ ID, Vgs: 540mohm @ 3.4A, 5V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 6.1 Nc @ 5 V; Vgs (Max): 10V; Input Capacitance (CISS) (Max) @ Vds: 250 PF @ 25 V; Power Dissipation (Max): 43W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-220-3;	Shielding Type: Standard; Cooling Method: Standard; Function: N/a; Encapsulation Structure: SMD; Power Level: Standard; Material: Standard; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 80 V; Current - Continuous Drain (ID) @ 25c: 28A (Tc); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 25mohm @ 10.2A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 160 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4700 PF @ 40 V; Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: Powerpak® So-8; Base Product Number: Si7469;	Shape: DIP; Shielding Type: Standard; Cooling Method: Standard; Function: N/a; Working Frequency: Standard; Structure: Standard; Encapsulation Structure: DIP; Power Level: Standard; Material: Standard; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; Continuous Drain (ID) @ 25°c: 9.3A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 300mohm @ 5.4A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250ua; Gate Charge (Qg) (Max) @ Vgs: 35 Nc @ 10 V; Vgs (Max): +-20V; Input Capacitance (CISS) (Max) @ Vds: 575 PF @ 25 V; Power Dissipation (Max): 82W (Tc); Operating Temperature: -55c ~ 175c (Tj); Mounting Type: Surface Mount; Supplier Device Package: D2pak; Package / Case: to-263-3, D2pak (2 Leads + Tab), to-263ab;
Supplier Name	Wuxi Goford Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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