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RF Amplifier B39182-B1315-L210 Duplexer New IC for Communication Equipment Internet of Things pictures & photos

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What is RF Amplifier B39182-B1315-L210 Duplexer New IC for Communication Equipment Internet of Things

Name: RF Amplifier B39182-B1315-L210 Duplexer New IC for Communication Equipment Internet of Things
Uploaded: 2024-05-24T14:34:56+08:00
Description: Place of Origin Guangdong, China Brand Name Original Model Number All models, Please contact supplier Mounting Type One Stop Buy Online Electronic Components Description One Stop Buy Online Electron

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.10-10.00 / Piece

Sepcifications

Transport Package 2.5± 0.1 mm × 2.0± 0.1 mm
Trademark Original
Origin Original
Package Height 0.7 mm (Max.)
Approximate Weight 9 Mg
RoHS Compatible
Package for Surface Mount Technology SMT
Ni/Au-Plated Terminals
Electrostatic Sensitive Device ESD
Moisture Sensitivity Level 3 Msl3

Product Description

Place of Origin Guangdong, China Brand Name Original Model Number All models, Please contact supplier Mounting Type One Stop Buy Online Electronic Components Description One Stop Buy Online Electronic Components Payment Paypal\TT\Western Union\Trade Assurance Condition Brand Newand ...

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Hosoe technology Co.,LTD

Diamond Member Since 2024

Audited Supplier

Business Type Manufacturer/Factory, Trading Company
Business Range Apparel & Accessories, Consumer Electronics, Electrical & Electronics, Manufacturing & Processing Machinery, Sporting Goods & Recreation, Toys
Main Products Earphone, Smart Ring, Kids Camera, Lawn Mower, IC Chips, Smart Watch
Management System Certification ISO 9001, ISO 9000, ISO 14001, ISO 14000, ISO 20000, FSC
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Electronic Component Chip Comparison

	Quick View RF Amplifier B39182-B1315-L210 Duplexer New IC for Communication Equipment Internet of Things Contact Now	Quick View Custom 12inch Silicon Wafer Price Single Crystal Silicon Wafer Contact Now	Quick View More in Size 4" 6" 8" Dummy N 100 Fz Prime Silicon Wafers Contact Now	Quick View 2" 3" 4" 5" 6" 8" 12" Silicon Wafers P or N Type Prime/Test/Dummy Oxide Silicon Wafer Contact Now	Quick View N/P Type 2inch 3inch 4inch 6inch Prime Grade Testing CZ Fz a-Si Undrop Poly Silicon Wafer Contact Now

Transaction Info
	Quick View RF Amplifier B39182-B1315-L210 Duplexer New IC for Communication Equipment Internet of Things Contact Now	Quick View Custom 12inch Silicon Wafer Price Single Crystal Silicon Wafer Contact Now	Quick View More in Size 4" 6" 8" Dummy N 100 Fz Prime Silicon Wafers Contact Now	Quick View 2" 3" 4" 5" 6" 8" 12" Silicon Wafers P or N Type Prime/Test/Dummy Oxide Silicon Wafer Contact Now	Quick View N/P Type 2inch 3inch 4inch 6inch Prime Grade Testing CZ Fz a-Si Undrop Poly Silicon Wafer Contact Now
Price	US $ 0.10-10.00/ Piece	US $ 25/ pc	US $ 25/ pc	US $ 25/ pc	US $ 50.00-100.00/ pc
Min Order	5000 Pieces	50 pc	50 pc	50 pc	50 pc
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001, ISO 9000, ISO 14001, ISO 14000, ISO 20000, FSC	ISO 29001	ISO 29001	ISO 29001	ISO 29001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-	-	-	-
Product Attributes
Specification	Package Height: 0.7 mm (Max.); Approximate Weight: 9 Mg; RoHS: Compatible; Package for Surface Mount Technology: SMT; Ni/Au-Plated: Terminals; Electrostatic Sensitive Device: ESD; Moisture Sensitivity Level 3: Msl3;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;
Supplier Name	Hosoe technology Co.,LTD	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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