New Recovery Rectifier Diode 60A300V to-247 Stth6003 Stth6003cw pictures & photos

New Recovery Rectifier Diode 60A300V to-247 Stth6003 Stth6003cw

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Price

Min. Order Reference FOB Price

10 Pieces US$0.30-0.80 / Piece

Sepcifications

Certification RoHS
Shape DIP
Function Switch Transistor
Power Level High Power
Material Plastic and Copper
Transport Package Tray
Specification Plastic and copper
Trademark CHN
Origin Chn
Product Number Stth6003cw
Detailed Description Diode Array 1 Pair Common Cathode Standard 300 V
Product Type Diode
Category Diode
Base Product Number Stth6003

Product Description

Product Description Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300 V Current - Average Rectified (Io) (per Diode) 30A Voltage - Forward (Vf) (Max) @ If 1.25 V @ 30 A Speed Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) 55 ...

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Shenzhen Jin Da Peng Technology Co., Ltd.

Diamond Member Since 2016

Audited Supplier

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Main Products Transistor, IC, Rectifier
Number of Employees 18
Year of Establishment 2008-09-17
Plant Area 250 square meters
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays

Diode Comparison

	New Recovery Rectifier Diode 60A300V to-247 Stth6003 Stth6003cw Contact Now	Quick View Pd Charger RoHS Perfect Replacement for The Gallium Nitride (GaN) Device in High-Frequency Operations Super Si Mosfet Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now

Transaction Info
	New Recovery Rectifier Diode 60A300V to-247 Stth6003 Stth6003cw Contact Now	Quick View Pd Charger RoHS Perfect Replacement for The Gallium Nitride (GaN) Device in High-Frequency Operations Super Si Mosfet Contact Now	Quick View Low Collector - Emitter Saturation Voltage Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Contact Now	Quick View Highly Reliable General Inverter of Automotive and Industrial IGBT Contact Now	Quick View Igbts Insulated Gate Bipolar Transistors Contact Now
Price	US $ 0.30-0.80/ Piece	US $ 0.2/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece	US $ 0.10-0.60/ Piece
Min Order	10 Pieces	660 Pieces	1000 Pieces	1000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal	T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Product Certification	RoHS	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Shape: DIP; Function: Switch Transistor; Power Level: High Power; Material: Plastic and Copper; Product Number: Stth6003cw; Detailed Description: Diode Array 1 Pair Common Cathode Standard 300 V; Product Type: Diode; Category: Diode; Base Product Number: Stth6003;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Material: Silicon; Description: Extremely Low Switching Loss; Characteristics: Excellent Stability and Uniformity; Applications: PC Power; Industries: LED Lighting;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: ST; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Microwave Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Shenzhen Jin Da Peng Technology Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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