High Voltage Diode Hdt5kv/5.0A Rectifier Assembly

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Price

Min. Order Reference FOB Price

100 Pieces US$3.10-7.70 / Piece

Sepcifications

Application Diode, Rectification
Batch Number 2023+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Hdt5kv/5.0A
Package Through-Hole
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package 50PCS in a Box
Trademark Leadsun
Origin Anshan China
Feature More Sizes to Choose
Use Electrostatic Cleaning
Brand Leadsun

Product Description

High Voltage Rectifier Silicon Assembly Diode HDT5KV/5.0A Particle Accelerate Diode Feature: Avalanche characteristic More sizes to choose vacuum molded, non-corrosive epoxy resin case Tj:-40ºC--+120ºC Application: High voltage rectifier used in electrostatic cleaning High ...

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Anshan Leadsun Electronics Co., Ltd.

Gold Member Since 2014

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products High Voltage Diode
Number of Employees 24
Year of Establishment 2001-07-10
Management System Certification ISO9001:2015
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Modular Hi-Bel Rectifier Assembly Comparison

	High Voltage Diode Hdt5kv/5.0A Rectifier Assembly Contact Now	Quick View 300mm 12inch Silicon Polished Wafer Semiconductor Dummy/Test Wafer Monocrystalline Silicon Wafer Contact Now	Quick View 12 Inch Polished P Type Single Crystal Dummy Silicon Wafer Contact Now	Quick View 12 Inch Monocrystalline Silicon P/N Type Polished Wafer Semiconductor Dummy Wafer Contact Now	-100V -30A Nce01p30d Nce P-Channel Enhancement Mode Power Mosfet with to-263 Contact Now

Transaction Info
	High Voltage Diode Hdt5kv/5.0A Rectifier Assembly Contact Now	Quick View 300mm 12inch Silicon Polished Wafer Semiconductor Dummy/Test Wafer Monocrystalline Silicon Wafer Contact Now	Quick View 12 Inch Polished P Type Single Crystal Dummy Silicon Wafer Contact Now	Quick View 12 Inch Monocrystalline Silicon P/N Type Polished Wafer Semiconductor Dummy Wafer Contact Now	-100V -30A Nce01p30d Nce P-Channel Enhancement Mode Power Mosfet with to-263 Contact Now
Price	US $ 3.10-7.70/ Piece	US $ 25/ pc	US $ 25/ pc	US $ 25/ pc	US $ 0.36-0.50/ Piece
Min Order	100 Pieces	50 pc	50 pc	50 pc	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 29001	ISO 29001	ISO 29001	-
Trade Capacity
Export Markets	North America, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	-	-	-	-	Off-season: 1-3 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Application: Diode, Rectification; Batch Number: 2023+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Hdt5kv/5.0A; Package: Through-Hole; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Feature: More Sizes to Choose; Use: Electrostatic Cleaning; Brand: Leadsun;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Equipment; Batch Number: Na; Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Model: Custimize; Package: Semi Standard; Signal Processing: Na; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm; Brand: Fsm;	Application: Equipment; Batch Number: Na; Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Model: Custimize; Package: Semi Standard; Signal Processing: Na; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm; Brand: Fsm;	Application: Portable Equipment and Battery Powered Systems; Batch Number: 2023+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Nce01p30d; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Voltage: -100V; Current: -30A; Channel: P-Channel Mosfet; Applications: Portable Equipment and Battery Powered Systems; Brand: Nce;
Supplier Name	Anshan Leadsun Electronics Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
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