QLG30KV/1.5A High Frequency Bridge Rectifier Full Bridge

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces Negotiable

Sepcifications

  • Application Rectification
  • Batch Number 2010+
  • Manufacturing Technology Discrete Device
  • Material Element Semiconductor
  • Model QLG30kv/1.5A
  • Package Through-Hole
  • Signal Processing Analog Digital Composite and Function
  • Type P-Type Semiconductor
  • Transport Package 50PCS in a Box
  • Trademark Leadsun
  • Origin Anshan China
  • Tj -40oc~+120oc
  • Use Electrostatic Cleaning
  • Feature More Size Available
  • Trr 100ns
  • Brand Leadsun

Product Description

QLG30KV/1.5A high frequency bridge rectifier full bridge Feature: 1. Avalanche characteristic 2. More size available 3. Vacuum molded, non-corrosive epoxy resin case 4. Tj: -40ºC~+120ºC Application: ...

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Qlg30kv/1.5A Comparison
Transaction Info
Price Negotiable US $ 25/ pc US $ 25/ pc US $ 50.00-100.00/ pc US $ 50.00-100.00/ pc
Min Order 10 Pieces 50 pc 50 pc 50 pc 50 pc
Trade Terms - - - - -
Payment Terms T/T, Western Union T/T, Paypal T/T, Paypal T/T, Paypal T/T, Paypal
Quality Control
Management System Certification ISO 9001 ISO 29001 ISO 29001 ISO 29001 ISO 29001
Trade Capacity
Export Markets North America, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time - - - - -
Product Attributes
Specification
Application: Rectification;
Batch Number: 2010+;
Manufacturing Technology: Discrete Device;
Material: Element Semiconductor;
Model: QLG30kv/1.5A;
Package: Through-Hole;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Tj: -40oc~+120oc;
Use: Electrostatic Cleaning;
Feature: More Size Available;
Trr: 100ns;
Brand: Leadsun;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
Supplier Name

Anshan Leadsun Electronics Co., Ltd.

China Supplier - Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

China Supplier - Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

China Supplier - Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

China Supplier - Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

China Supplier - Gold Member Audited Supplier