High Voltage Diode 500kv

US$0.76 / Piece

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Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2 pictures & photos

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What is Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2

Name: Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2
Uploaded: 2024-05-05T18:08:18+08:00
Description: Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2 Features - Positive temperature coefficient - Temperature-independent switching -

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Price

Min. Order Reference FOB Price

1000 Pieces US$0.76 / Piece

Sepcifications

Certification RoHS
Function Switch Transistor
Encapsulation Structure TO-247AC
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark MR
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2 Features - Positive temperature coefficient - Temperature-independent switching - Maximum working temperature at 175 °C - Unipolar devices and zero reverse recovery current ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode 500kv Comparison

	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2 Contact Now	Quick View To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT Contact Now	Quick View To247 Ost90n60hczf Vces-600V Maximum Junction Temperature175 Pulse-270A N-Channel Power IGBT Contact Now	Quick View Sic Diode To247-4L Ost80n65h4ewf Vces-650V Pulse-320A Vce (sat) -1.45V Qg-168nc N-Channel Power IGBT Contact Now	Quick View To247 Ost90n60hczf Vces-650V Maximum Junction Temperature175 Pulse-300A N-Channel Power IGBT Contact Now

Transaction Info
	Quick View Silicon Carbide Schottky Diode VRRM=1200V IF=51A QC=216nC fetures applications High-frequency operation YJD112040NQG2 Contact Now	Quick View To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT Contact Now	Quick View To247 Ost90n60hczf Vces-600V Maximum Junction Temperature175 Pulse-270A N-Channel Power IGBT Contact Now	Quick View Sic Diode To247-4L Ost80n65h4ewf Vces-650V Pulse-320A Vce (sat) -1.45V Qg-168nc N-Channel Power IGBT Contact Now	Quick View To247 Ost90n60hczf Vces-650V Maximum Junction Temperature175 Pulse-300A N-Channel Power IGBT Contact Now
Price	US $ 0.76/ Piece	US $ 0.10-1.10/ Piece	US $ 0.10-1.10/ Piece	US $ 0.20-1.20/ Piece	US $ 0.10-1.10/ Piece
Min Order	1000 Pieces	600 Pieces	600 Pieces	450 Pieces	330 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T	T/T	T/T	T/T
Quality Control
Product Certification	RoHS	RoHS, CE, ISO, CCC	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001	ISO 9001, ISO 14001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)	Off-season: 3-6 Month(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Function: Switch Transistor; Encapsulation Structure: TO-247AC; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;	Shape: Metal Porcelain Tube; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Function: Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.	Shanghai Winture Electric Co., Ltd.
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