HY SEMIHOW LOTEN WAYON SILICONEGEAR SIC DIODES

US$0.16-1.00 / Piece

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PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E pictures & photos

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What is PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E

Name: PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E
Uploaded: 2023-08-28T18:06:08+08:00
Description: PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E VDSS , 60V RDS(ON) , 9.8mΩ (max.) @ VGS=10V RDS(ON) , 15.4m&

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.00

10-99 Pieces US$0.79

100+ Pieces US$0.16

Sepcifications

Certification RoHS, CE, ISO, CCC
Function Microwave Transistor, Switch Transistor
Working Frequency Low Frequency
Structure Planar
Encapsulation Structure PDFN 3.3 x 3.3-8L
Material Silicon
Transport Package Plastic Package
Specification Customized
Trademark Silicongear
Origin Guangdong, China
Features1 Extremely Low Switching Loss
Features2 Excellent Stability and Uniformity
Features3 100% Avalanche Tested
Features4 Built-in ESD Diode
Application1 Switch Mode Power Supply (SMPS)
Application2 Power Factor Correction (Pfc)
Application3 Uninterruptible Power Supply (UPS)
Application4 AC to DC Converters
Application5 Telecom
Application6 TV Power & LED Lighting Power

Product Description

PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E VDSS , 60V RDS(ON) , 9.8mΩ (max.) @ VGS=10V RDS(ON) , 15.4mΩ (max.) @ VGS=4.5V ID , 44.8A Features : • Low On-Resistance RDS (on) • ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

HY SEMIHOW LOTEN WAYON SILICONEGEAR SIC DIODES Comparison

	Quick View PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E Contact Now	N-CH Mosfet Transistor 40V 60A 9mohm @4.5V G60n04K Dpak (TO-252) Contact Now	Quick View High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 Contact Now	Ces2316 Alternative Goford 3400L 30V 5.6A Sot-23-3L Mosfet Contact Now	G3401A Instead of Sm3095psdc-Trg Mobile Power Supply Digital Products Usage Mosfet Contact Now

Transaction Info
	Quick View PDFN 3.3X3.3-8L / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N12E Contact Now	N-CH Mosfet Transistor 40V 60A 9mohm @4.5V G60n04K Dpak (TO-252) Contact Now	Quick View High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60 Contact Now	Ces2316 Alternative Goford 3400L 30V 5.6A Sot-23-3L Mosfet Contact Now	G3401A Instead of Sm3095psdc-Trg Mobile Power Supply Digital Products Usage Mosfet Contact Now
Price	US $ 0.16-1.00/ Piece	US $ 0.115-0.135/ Piece	US $ 2.50-4.00/ Piece	US $ 0.017-0.02/ Piece	US $ 0.008-0.01/ Piece
Min Order	1 Pieces	20 Pieces	10 Pieces	20 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	T/T, Paypal	T/T, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS, ISO	-	RoHS, ISO	RoHS, ISO
Management System Certification	-	ISO 9001	-	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	Own Brand	-	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Function: Microwave Transistor, Switch Transistor; Working Frequency: Low Frequency; Structure: Planar; Encapsulation Structure: PDFN 3.3 x 3.3-8L; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application2: Power Factor Correction (Pfc); Application3: Uninterruptible Power Supply (UPS); Application4: AC to DC Converters; Application5: Telecom; Application6: TV Power & LED Lighting Power;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 40V; ID: 60A; RDS: 9mohm (Vgs=4.5V); Pd: 65W; Package: to-252; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 2500PCS/Reel; Vth: 2.2V; CISS: 1800; Crss: 190;	Shape: GT; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: IGBT Transistor; Working Frequency: High Frequency; Structure: Alloy; Encapsulation Structure: Ceramic Packaged Transistor; Power Level: High Power; Material: Silicon; Installation Style: SMD / SMT; Product Category: IGBT Transistors; Operating Temperature: Standard; Collector- Emitter Voltage Vceo Max: 600 V; Additional Feature: Low Conduction Loss; Series: Fgh40n60SMD; Packaging: Tube; Base Product Number: Fgh40n60; Subcategory: IGBT;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: 30V; ID: 5.6A; RDS: 21 Mr; Pd: 1.4W; Package: Sot-23-3; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;	Shape: SMD; Function: Switch Transistor; Structure: Trench; Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Material: Silicon; Vdss: -30V; ID: -4.2A; RDS: 51 Mr; Pd: 1.2W; Package: Sot-23; Stock: in Stock; Sample: Available; Lead Free Status: Pb-Free; Spq: 3000PCS/Reel;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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