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What is LSD65R125HT TO-220F N-channel 650V, 25A1), 0.125Ω LonFETTM Power MOSFET

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1,000-4,999 Pieces US$1.30

5,000+ Pieces US$1.20

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape GT
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method Naturally Cooled Tube
  • Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Chip Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Plastic Package
  • Specification TO-220F
  • Origin Guangdong, China
  • Features1 LowRDS(on)
  • Features2 Lowgatecharge(typ.Qg=41.9nC)
  • Features3 100%UIStested
  • Features4 RoHScompliant
  • Application3 Power Factor Correction (Pfc)
  • Application4 Switchedmodepowersupplies.
  • Application6 LEDdriver.

Product Description

LSD65R125HT TO-220F N-channel 650V, 25A1), 0.125Ω LonFETTM Power MOSFET More Product Models: LND4N65,LND7N65,LND10N65,LND12N65,LND13N50, LND16N65,LND18N50,LND20N65 Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional ...

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Transaction Info
Price US $ 1.20-1.30/ Piece US $ 0.01-1.00/ Piece US $ 0.10-0.50/ Piece US $ 0.01-1.00/ Piece US $ 0.10-0.50/ Piece
Min Order 1000 Pieces 1 Pieces 1 Pieces 1 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC - - - -
Management System Certification - GMP GMP GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM, ODM OEM OEM OEM OEM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- - - -
Product Attributes
Specification
Shape: GT;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Features1: LowRDS(on);
Features2: Lowgatecharge(typ.Qg=41.9nC);
Features3: 100%UIStested;
Features4: RoHScompliant;
Application3: Power Factor Correction (Pfc);
Application4: Switchedmodepowersupplies.;
Application6: LEDdriver.;
Shape: DIP;
Function: Mosfet;
Fet Type: P-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 20 V;
Continuous Drain (ID) @ 25°c: 3.7A (Ta);
Drive Voltage (Max RDS on, Min RDS on): 1.5V, 4.5V;
RDS on (Max) @ ID, Vgs: 78mohm @ 2A, 4.5V;
Vgs(Th) (Max) @ ID: 1.2V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 15 Nc @ 4.5 V;
Vgs (Max): ±8V;
Input Capacitance (CISS) (Max) @ Vds: 865 PF @ 10 V;
Power Dissipation (Max): 1.7W (Ta);
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: 4-Wlcsp (1X1);
Base Product Number: Fdz37;
Shape: DIP/SMD;
Shielding Type: N/a;
Cooling Method: N/a;
Function: N/a;
Working Frequency: N/a;
Structure: N/a;
Encapsulation Structure: DIP/SMD;
Power Level: N/a;
Material: N/a;
Shape: DIP;
Function: Mosfet;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 200 V;
Continuous Drain (ID) @ 25°c: 30A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 75mohm @ 18A, 10V;
Vgs(Th) (Max) @ ID: 4V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 123 Nc @ 10 V;
Vgs (Max): ±20V;
Input Capacitance (CISS) (Max) @ Vds: 2159 PF @ 25 V;
Power Dissipation (Max): 214W (Tc);
Operating Temperature: -55°c ~ 175°c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-247AC;
Base Product Number: to-247-3;
Shape: DIP/SMD;
Shielding Type: N/a;
Cooling Method: N/a;
Function: N/a;
Working Frequency: N/a;
Structure: N/a;
Encapsulation Structure: DIP/SMD;
Power Level: N/a;
Material: N/a;
12: 12;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier