Min. Order Reference FOB Price
1000 Pieces US$0.78 / Piece
Product Description
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS-1200V / ID(25°C)-39A / RDS(on)- 80mΩ / TO-247-4L Fetures Applications YJD212080NCFG1Q Features - High speed switching - Essentially no switching losses - Reduction of heat sink requirements - Maximum working temperature at 175 ...