RU7080S TO-263 70V/80A, N-Channel Advanced Power MOSFET  Semiconductor Diode MOS

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1,000-2,999 Pieces US$0.21

3,000+ Pieces US$0.20

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape GT
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method Naturally Cooled Tube
  • Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Chip Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Plastic Package
  • Specification RU7080S TO-263
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application3 Power Factor Correction (Pfc)
  • Application4 Uninterruptible Power Supply (UPS)
  • Application5 AC to DC Converters
  • Application6 Telecom, Solar

Product Description

RU7080S TO-263 70V/80A, N-Channel Advanced Power MOSFET Semiconductor Diode MOS More Product Models: Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semiconductor discrete device sales and technical services. ...

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Transaction Info
Price US $ 0.20-0.21/ Piece US $ 900.00-1,700.00/ Piece US $ 0.3/ Piece Negotiable Negotiable
Min Order 1000 Pieces 1 Pieces 1000 Pieces 1 Pieces 1 Pieces
Trade Terms - - - FOB, CIF, EXW FOB, CIF, EXW
Payment Terms L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, Western Union, Money Gram T/T T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC - RoHS, CE, ISO, CCC, SGS - -
Management System Certification - - ISO 9001, HSE, GMP, QHSE, EICC, GAP, BREEAM, QSR, ISO 50001 - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic North America, Eastern Europe, Africa, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - > US $100 Million > US $100 Million
Business Model OEM, ODM - OEM, ODM, Own Brand OEM, ODM OEM, ODM
Average Lead Time Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: 1-3 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Off-season: within 15 Day(s)
Peak-season: 1 Month(s)
Product Attributes
Specification
Shape: GT;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Chip Transistor;
Power Level: High Power;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application3: Power Factor Correction (Pfc);
Application4: Uninterruptible Power Supply (UPS);
Application5: AC to DC Converters;
Application6: Telecom, Solar;
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: High Frequency Generator for Oscillator;
Working Frequency: High Frequency;
Structure: Metal- Ceramic;
Encapsulation Structure: Metal- Ceramic;
Power Level: High Power;
Material: Metal- Ceramic;
Shape: ST;
Shielding Type: Sharp Cutoff Shielding Tube;
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Alloy;
Encapsulation Structure: Gold Sealed Transistor;
Power Level: Small Power;
Material: Silicon;
Shape: Metal Porcelain Tube;
Cooling Method: Water and Forced Air;
Working Frequency: High Frequency;
Encapsulation Structure: Other;
Power Level: High Power;
Material: Metal Ceramic;
Filament Voltage: 10V;
Filament Current: 86A;
Amplifcation Factor: 70;
Power: 10kw;
Working Position: Vertical;
Max Height: 150mm;
Max Diameter: 172mm;
Max Weight: 8.9kg;
Cooling: Water and Forced Air;
Working Frequency: High Frequency;
Encapsulation Structure: Foam Packing;
Power Level: High Power;
Filament Voltage: 7.5V;
Filament Current: 76A;
Amplifcation Factor: 5.5;
Power: 7kw;
Working Position: Vertical;
Max Height: 235mm;
Max Diameter: 133mm;
Max Weight: 3kg;
Cooling: Forced Air;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Beijing Jenerator Electronic Co.,Ltd

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Jiangsu Zhongxin Semiconductor Co., Ltd.

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Ningbo Setec Electron Co., Ltd.

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Ningbo Setec Electron Co., Ltd.

China Supplier - Gold Member Audited Supplier