Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) pictures & photos

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

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Price

Min. Order Reference FOB Price

100 Pieces US$0.05 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure DIP
Installation Plug-in Triode
Power Level Medium Power
Material Silicon
Transport Package Standard
Specification Standard
Origin Original
Transistor Polarity NPN
Current - Collector (IC) (Max) 5 a
Voltage - Collector Emitter Breakdown (M 60 V
Vce Saturation (Max) @ Ib, IC 300mv @ 200mA, 2A
Current - Collector Cutoff (Max) 10µa (Icbo)
DC Current Gain (Hfe) (Min) @ IC, Vce 160 @ 2A, 1V
Power - Max 1.3 W
Operating Temperature 150°c (Tj)

Product Description

Original KSD1691YSTU Bipolar (BJT) Transistor NPN 60V 5A 1.3W KSD1691 (We provide Bom service PCB PCBA) Provide bom serice/Contact for more than 100,000 components/PCB TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Package ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(6 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

Electronic Component Comparison

	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	P-CH Trench Mosfet Field Effect Transistor in a Dfn3*3-8L Package for Power Switch Contact Now	P-Channel Mosfet Transistor Manufacturers for Load Switch Contact Now	SGS RoHS Compliant Mosfet (metal oxide semidonductor field effect transistor) Supplier Contact Now	Electric Components Medium Power Field Effect Mosfet Package Sop-8 Contact Now

Transaction Info
	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	P-CH Trench Mosfet Field Effect Transistor in a Dfn3*3-8L Package for Power Switch Contact Now	P-Channel Mosfet Transistor Manufacturers for Load Switch Contact Now	SGS RoHS Compliant Mosfet (metal oxide semidonductor field effect transistor) Supplier Contact Now	Electric Components Medium Power Field Effect Mosfet Package Sop-8 Contact Now
Price	US $ 0.05/ Piece	Negotiable	Negotiable	Negotiable	Negotiable
Min Order	100 Pieces	100 Pieces	100 Pieces	100 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	T/T, D/P, Western Union, Paypal, Money Gram	T/T, D/P, Western Union, Paypal, Money Gram	T/T, D/P, Western Union, Paypal, Money Gram	T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS	RoHS, ISO	RoHS, ISO	RoHS, ISO	RoHS, ISO
Management System Certification	GMP	ISO 9001	ISO 9001	ISO 9001	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	-	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)	Off-season: 1 Month(s)
Product Attributes
Specification	Encapsulation Structure: DIP; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Transistor Polarity: NPN; Current - Collector (IC) (Max): 5 a; Voltage - Collector Emitter Breakdown (M: 60 V; Vce Saturation (Max) @ Ib, IC: 300mv @ 200mA, 2A; Current - Collector Cutoff (Max): 10µa (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 160 @ 2A, 1V; Power - Max: 1.3 W; Operating Temperature: 150°c (Tj);	Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vdss: -30V; ID: -16A; Pd: 3W; RDS: MΩ @ Vgs=4.5V; Vth: -1.5V; CISS: 1995PF; Crss: 260PF;	Power Level: Small Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vds: -12V; ID: -16A; RDS: 17 MΩ @ Vgs=10V; Vth: -0.7V; Package: Sop-8; CISS: 1740PF; Crss: 200PF;	Encapsulation Structure: Plastic Sealed Transistor; Power Level: Small Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vdss: +20/-20V; ID: 2.9A/-3A; RDS: 30mΩ @ Vgs=4.5V; Vth: 0.85V; Package: Sot-23-6; CISS: 300PF; Crss: 80PF;	Encapsulation Structure: Plastic Sealed Transistor; Power Level: Medium Power; Function: Switch Transistor; Structure: Trench; Material: Silicon; Vdss: 60V; ID: 6A; RDS: 24 MΩ @ Vgs=10V; Vth: 1.7V; CISS: 979; Crss: 100;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.	Wuxi Goford Semiconductor Co., Ltd.
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