Original Fdn335 Fdn336 Fdn337 Fdn338 Fdn339 Mosfet Transistor

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces US$0.08 / Piece

Sepcifications

  • Certification RoHS
  • Encapsulation Structure Chip Transistor
  • Installation SMD Triode
  • Power Level Medium Power
  • Structure Mosfet
  • Material Silicon
  • Transport Package Standard
  • Specification Standard
  • Origin Original
  • Fet Type N-Channel
  • Technology Mosfet (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (ID) @ 25 2.2A (Ta)
  • Drive Voltage (Max RDS on, Min RDS on) 2.5V, 4.5V
  • RDS on (Max) @ ID, Vgs 65mohm @ 2.2A, 4.5V
  • Vgs(Th) (Max) @ ID 1V @ 250µa
  • Gate Charge (Qg) (Max) @ Vgs 9 Nc @ 4.5 V
  • Vgs (Max) ±8V
  • Input Capacitance (CISS) (Max) @ Vds 300 PF @ 10 V
  • Operating Temperature -55°c ~ 150°c (Tj)
  • Mounting Type Surface Mount
  • Package / Case Sot-23-3
  • Power Dissipation (Max) 500MW (Ta)
  • Supplier Device Package Sot-23-3

Product Description

Original FDN335 FDN336 FDN337 FDN338 FDN339 Mosfet Transistor Provide bom serice / more than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Package Tape &Reel (TR) Cut Tape (CT) Product ...

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Electronic Component Comparison
Transaction Info
Price US $ 0.08/ Piece US $ 0.160/ Piece US $ 0.320/ Piece US $ 300.00-350.00/ Piece US $ 0.314-0.92/ Piece
Min Order 100 Pieces 1000 Pieces 1000 Pieces 1 Pieces 100 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal, Money Gram T/T T/T
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC - RoHS
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe - North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM OEM, ODM OEM, ODM - -
Average Lead Time - Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
- Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Power Level: Medium Power;
Structure: Mosfet;
Material: Silicon;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 30 V;
Current - Continuous Drain (ID) @ 25: 2.2A (Ta);
Drive Voltage (Max RDS on, Min RDS on): 2.5V, 4.5V;
RDS on (Max) @ ID, Vgs: 65mohm @ 2.2A, 4.5V;
Vgs(Th) (Max) @ ID: 1V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 9 Nc @ 4.5 V;
Vgs (Max): ±8V;
Input Capacitance (CISS) (Max) @ Vds: 300 PF @ 10 V;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Package / Case: Sot-23-3;
Power Dissipation (Max): 500MW (Ta);
Supplier Device Package: Sot-23-3;
Encapsulation Structure: PDFN5060-8L;
Installation: PDFN5060-8L;
Working Frequency: PDFN5060-8L;
Power Level: PDFN5060-8L;
Function: Power Triode;
Structure: PDFN5060-8L;
Material: metal;
Feature1: Green Device Available;
Feature2: 100% EAS Guaranteed;
Feature3: Optimized for High Speed Smooth Switching;
Application1: Power Management Switches;
Application2: DC/DC Converters;
Application3: Synchronous Rectification;
Encapsulation Structure: WML90R1K5S;
Installation: both;
Working Frequency: WML90R1K5S;
Power Level: WML90R1K5S;
Function: Power Triode;
Structure: WML90R1K5S;
Material: metal;
Feature1: VDS =950V Tj,max;
Feature2: Typ. RDS(on) =1.28ohm;
Feature3: 100% UIS tested;
Feature4: Pb-free plating, Halogen free;
Applications: LED Lighting, Charger, Adapter, PC, LCD TV, Server;
Installation: Any;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Material: Metal-Ceramic;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Structure: PNP;
Polar: PNP;
Breakdown Voltage (Collector-Emitter): 120 V;
Number of Pins: 3;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Packing: Tube;
Encapsulation: to-3p;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

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Dongguan Merry Electronic Co., Ltd.

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Dongguan Merry Electronic Co., Ltd.

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Yangjiang RUI XIAO Enterprise Co., Ltd.

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