Original CS3205b8 CS3205 60V 120A N-Channel Power Mosfet Transistor

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

100 Pieces US$0.25 / Piece

Sepcifications

  • Certification RoHS
  • Shape DIP
  • Shielding Type Remote Cut-Off Shielding Tube
  • Cooling Method Naturally Cooled Tube
  • Function Mosfet Transistor
  • Encapsulation Structure DIP
  • Material Silicon
  • Transport Package Standard
  • Specification Standard
  • Origin China
  • Drain Source Voltage (Vdss) 60V
  • Continuous Drain Current (ID) 120A
  • Drain Source on Resistance (RDS(on)@Vgs, 8mΩ@10V,50A
  • Power Dissipation (Pd) 230W
  • Gate Threshold Voltage (Vgs(Th)@ID) 4V@250ua
  • Type N Channel

Product Description

Original CS3205B8 CS3205 60V 120A N-Channel Power Mosfet Transistor Attribute Value Category Triode/MOS Tube/Transistor/MOSFETs Drain Source Voltage (Vdss) 60V Continuous Drain Current (Id) 120A Drain Source On Resistance (RDS(on)@Vgs,Id) 8mΩ@10V,50A Power Dissipation (Pd) 230W ...

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CS3205b8 Comparison
Transaction Info
Price US $ 0.25/ Piece US $ 0.09-1.18/ Piece US $ 0.13-1.28/ Piece US $ 0.09-1.19/ Piece US $ 0.07-1.13/ Piece
Min Order 100 Pieces 1 Pieces 1 Pieces 1 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model OEM OEM, ODM OEM, ODM OEM, ODM OEM, ODM
Average Lead Time - Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Shape: DIP;
Shielding Type: Remote Cut-Off Shielding Tube;
Cooling Method: Naturally Cooled Tube;
Function: Mosfet Transistor;
Encapsulation Structure: DIP;
Material: Silicon;
Drain Source Voltage (Vdss): 60V;
Continuous Drain Current (ID): 120A;
Drain Source on Resistance (RDS(on)@Vgs,: 8mΩ@10V,50A;
Power Dissipation (Pd): 230W;
Gate Threshold Voltage (Vgs(Th)@ID): 4V@250ua;
Type: N Channel;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: TO-220F;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: PDFN 5x6-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: PDFN 3.3 x 3.3-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Function: Microwave Transistor, Switch Transistor;
Working Frequency: Low Frequency;
Structure: Planar;
Encapsulation Structure: PDFN 3.3 x 3.3-8L;
Material: Silicon;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Dongguan Merry Electronic Co., Ltd.

China Supplier - Diamond Member Audited Supplier