Ipn60r3K4ceatma1 N-Channel Mosfet Transistor 600 V 2.6A (Tc) 5W (Tc) SMD Pg-Sot223-3 Ipn60r3 Series
Price
Purchase Qty. Reference FOB Price
1-9 Pieces US$1.00
10-99 Pieces US$0.10
100+ Pieces US$0.01
Sepcifications
- Shape SMD
- Function Mosfet
- Transport Package Standard
- Specification Standard
- Origin Original
- Fet Type N-Channel
- Technology Mosfet (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Continuous Drain (ID) @ 25°c 2.6A (Tc)
- Drive Voltage (Max RDS on, Min RDS on) 10V
- RDS on (Max) @ ID, Vgs 3.4ohm @ 500mA, 10V
- Vgs(Th) (Max) @ ID 3.5V @ 40µa
- Gate Charge (Qg) (Max) @ Vgs 4.6 Nc @ 10 V
- Vgs (Max) ±20V
- Input Capacitance (CISS) (Max) @ Vds 93 PF @ 100 V
- Power Dissipation (Max) 5W (Tc)
- Operating Temperature -40°c ~ 150°c (Tj)
- Mounting Type Surface Mount
- Supplier Device Package Pg-Sot223-3
- Base Product Number Ipn60r3
Product Description
IPN60R3K4CEATMA1 N-Channel Mosfet Transistor 600 V 2.6A (Tc) 5W (Tc) SMD PG-SOT223-3 IPN60R3 series Provide Bom services/More than 100,000 types of electronic components TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Product Status Active ...
