Electronic Component Iglr60r190d1xuma1 190mohms 12.8A 800V 55.5W

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Details
Company Profile

Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Encapsulation Structure Chip Transistor
  • Installation SMD Triode
  • Working Frequency Standard
  • Power Level Standard
  • Function Photosensitive, Darlington Tube, Power Triode, Switching Triode
  • Structure NPN
  • Material Silicon
  • Transport Package Foam Packing
  • Specification Standard
  • Trademark New&Original
  • Origin Original
  • Supply Type Through Hole
  • Delivery Time 1day
  • Price Factory Price
  • Quality New and Original

Product Description

Product Description Electronic Component IGLR60R190D1XUMA1 190mOhms 12.8A 800V 55.5W Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: GaN Mounting Style: SMD/SMT Package / Case: TSON-8 Transistor Polarity: N-Channel ...

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Iglr60r190d1xuma1 Comparison
Transaction Info
Price US $ 0.001-0.10/ Piece US $ 0.69/ Piece US $ 0.20-0.50/ Piece US $ 0.4095-1.50/ Piece US $ 1.45/ Piece
Min Order 10 Pieces 100 Pieces 1 Pieces 500 Pieces 10 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal, Money Gram L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification RoHS, CE, ISO, CCC - - - RoHS, CE, ISO, CCC
Management System Certification GMP - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue - - - - -
Business Model OEM - - - -
Average Lead Time - Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Off-season: within 15 Day(s)
Peak-season: within 15 Day(s)
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: SMD Triode;
Working Frequency: Standard;
Power Level: Standard;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: NPN;
Material: Silicon;
Supply Type: Through Hole;
Delivery Time: 1day;
Price: Factory Price;
Quality: New and Original;
Encapsulation Structure: Gold Sealed Transistor;
Installation: Through Hole;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Structure: NPN;
Material: Germanium;
Detailed Description: 7 a, 160 V, N-Channel, Si, Power, Mosfet, to-3p;
Category: Transistors - Fets, Mosfets - Single;
Fet Technology: Metal-Oxide Semiconductor;
Channel Type: N;
Channel Mode: Enhancement;
Fet Type: N-Channel;
Description: Mosfet N-CH 160V 7A to-3p;
Ds Breakdown Voltage-Min: 160 V;
Installation: Through Hole;
Function: Power Triode, Power Mosfet;
Material: Plastic and Copper;
Vgs Max: 20.0V;
Operating Temperature: Standard;
Package: to-220;
Ptot Max: 83.0W;
Product Number: Irfz44npbf;
Description: Mosfet N-CH 55V 49A to-220ab;
Fet Type: N-Channel;
Product Category: Mosfet;
Technology: Si;
Mounting Style: Through Hole;
Transistor Type: 1 N-Channel;
Transistor Polarity: N-Channel;
Packaging: Tube;
Height: 15.65 mm;
Function: Power Triode;
Condition: Brand Newand Original;
Product Number: Irfs630A;
Configuration: Single with Built-in Diode;
Fet Technology: Metal-Oxide Semiconductor;
Pulsed Drain Current-Max (Idm): 36 a;
Description: N-Channel Power Mosfet;
Package: Bulk;
Polarity/Channel Type: N-Channel;
Encapsulation Structure: Chip Transistor;
Installation: Through Hole;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode, Mosfet;
Structure: /;
Material: Plastic with Copper;
Fet Type: N-Channel;
Package: Tube;
Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;
Condition: Brand Newand Original;
Technology: Mosfet;
Current - Continuous Drain (ID): 8A (Tc);
Power Dissipation (Max): 125W (Tc);
Product Number: Irf840;
Drain to Source Voltage (Vdss): 500 V;
Mounting Type: Through Hole;
Operating Temperature: -55c ~ 150c (Tj);
Detailed Description: N-Channel 8A (Tc) 125W (Tc) Through Hole to-220ab;
Description: Mosfet N-CH 500V 8A to-220ab;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Shenzhen Jin Da Peng Technology Co., Ltd.

China Supplier - Diamond Member Audited Supplier