New and Original IC Pwr Drvr N-Chan 1: 1 14htssop TPS27s100bpwpt pictures & photos

New and Original IC Pwr Drvr N-Chan 1: 1 14htssop TPS27s100bpwpt

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$0.50

10-99 Pieces US$0.30

100+ Pieces US$0.10

Sepcifications

Shape DIP/SMD
Shielding Type N/a
Cooling Method N/a
Function N/a
Working Frequency N/a
Structure N/a
Encapsulation Structure DIP/SMD
Power Level N/a
Material N/a
Transport Package N/a
Specification DIP/SMD
Trademark N/A
Origin Original

Product Description

New and original IC PWR DRVR N-CHAN 1:1 14HTSSOP TPS27S100BPWPT Type IC shipping 3~7Day delivery address Shenzhen Brand Original Q1: What services do you offer? We provide turnkey solutions including R&D, PCB fabrication, SMT, testing, and other value-added services. Q2: What ...

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ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews： 5.0/5.0

(6 Reviews)

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics
Main Products IC, Resistor, Capacitor, Sensor, Transistor, Diode, Triode, Passive Components, Drive IC
Management System Certification GMP
Export Year 2021-08-12
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

TPS27s100bpwpt Comparison

	New and Original IC Pwr Drvr N-Chan 1: 1 14htssop TPS27s100bpwpt Contact Now	Quick View 100V/100A 3.9mΩ DG100N02Q N-Channel Advanced Power Mosfet Contact Now	Quick View HCFL65R210 DFN8*8 650V N-Channel Super Junction MOSFET COOLMOS Contact Now	Quick View 80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet Contact Now	N-Channel Advanced Power Mosfet 100V/100A 3.9mΩ DG100N02PB Contact Now

Transaction Info
	New and Original IC Pwr Drvr N-Chan 1: 1 14htssop TPS27s100bpwpt Contact Now	Quick View 100V/100A 3.9mΩ DG100N02Q N-Channel Advanced Power Mosfet Contact Now	Quick View HCFL65R210 DFN8*8 650V N-Channel Super Junction MOSFET COOLMOS Contact Now	Quick View 80V/85A 5.7mΩ DG80N02Q N-Channel Advanced Power Mosfet Contact Now	N-Channel Advanced Power Mosfet 100V/100A 3.9mΩ DG100N02PB Contact Now
Price	US $ 0.10-0.50/ Piece	US $ 0.30-0.33/ Piece	US $ 0.88-0.90/ Piece	US $ 0.20-0.22/ Piece	US $ 0.25-0.27/ Piece
Min Order	1 Pieces	3000 Pieces	1000 Pieces	3000 Pieces	1000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	-	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	GMP	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Extremely Low Switching Loss; Features2: Excellent Stability and Uniformity; Features3: 100% Avalanche Tested; Features4: Built-in ESD Diode; Application1: Switch Mode Power Supply (SMPS); Application3: Power Factor Correction (Pfc); Application4: Uninterruptible Power Supply (UPS); Application5: AC to DC Converters; Application6: Telecom, Solar;
Supplier Name	ShenZhen Nova Semiconductor Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
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