IC Toshiba Power Amplifier Silicon PNP Transistor 2SA1941.2sc5198 Electronic Components, Integrated Circuit pictures & photos

IC Toshiba Power Amplifier Silicon PNP Transistor 2SA1941.2sc5198 Electronic Components, Integrated Circuit

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Price

Min. Order Reference FOB Price

100 Pieces US$0.46-0.75 / Piece

Sepcifications

Certification RoHS
Encapsulation Structure Plastic Sealed Transistor
Installation Solder
Power Level High Power
Function Power Triode
Structure PNP
Material Silicon
Transport Package Box
Specification TO-3P
Origin Original

Product Description

Product Description The 2SA1941 AND 2SC5198 is the toshiba silicon triple diffused type transistor , can used in the power and audio amplifier applications. Features RECOMMEND FOR 70W HIGH FIDELITY AUDIO FREQUENCY AMPLIFIER OUTPUT STAGE. Product Parameters MAXIMUM RATINGS (Ta=25ºC) ...

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Yangjiang RUI XIAO Enterprise Co., Ltd.

Gold Member Since 2021

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Business Range Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters, Lights & Lighting, Tools & Hardware
Main Products Electronic Component, IC, Transistor, Diode, Capacitor, Resistor, Switch, Relay, LED/LCD, Module
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Amplifier Comparison

	IC Toshiba Power Amplifier Silicon PNP Transistor 2SA1941.2sc5198 Electronic Components, Integrated Circuit Contact Now	Quick View Cj75L05s Sot-89-3L 36V Low Current Consumption 300mA CMOS Voltage Ldo Linear Regulator Contact Now	(BW1184J2/YD1202) High-Frequency Water-Cooled Vacuum Electron Tube Oscillator RF Power Triode Contact Now	Original Nce40h12 40V 120A 130W Mosfet Transistor N-Channel Contact Now	Original Irfp4110 Irfp4110pbf N-Channel 100 V 120A (Tc) 370W (Tc) Mosfet Transistor SMT PCBA Contact Now

Transaction Info
	IC Toshiba Power Amplifier Silicon PNP Transistor 2SA1941.2sc5198 Electronic Components, Integrated Circuit Contact Now	Quick View Cj75L05s Sot-89-3L 36V Low Current Consumption 300mA CMOS Voltage Ldo Linear Regulator Contact Now	(BW1184J2/YD1202) High-Frequency Water-Cooled Vacuum Electron Tube Oscillator RF Power Triode Contact Now	Original Nce40h12 40V 120A 130W Mosfet Transistor N-Channel Contact Now	Original Irfp4110 Irfp4110pbf N-Channel 100 V 120A (Tc) 370W (Tc) Mosfet Transistor SMT PCBA Contact Now
Price	US $ 0.46-0.75/ Piece	US $ 0.0397-0.045/ Piece	US $ 3,000.00-3,500.00/ Piece	US $ 0.15/ Piece	US $ 2/ Piece
Min Order	100 Pieces	1000 Pieces	1 Pieces	2000 Pieces	250 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, D/P, Western Union, Paypal	T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS	RoHS, CE, ISO, CCC	-	-	RoHS
Management System Certification	-	ISO 9001	-	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America	-	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-
Product Attributes
Specification	Encapsulation Structure: Plastic Sealed Transistor; Installation: Solder; Power Level: High Power; Function: Power Triode; Structure: PNP; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency;	Installation: Vertical, Plate up or Down; Function: Power Triode; Material: Metal-Ceramic;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Silicon; Drain Source Voltage (Vdss): 40V; Continuous Drain Current (ID): 120A; Power Dissipation (Pd): 130W; Drain Source on Resistance (RDS(on)@Vgs,: 4mΩ@10V,20A; Gate Threshold Voltage (Vgs(Th)@ID): 2.5V@250ua; Type: N Channel;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Current - Continuous Drain (ID) @ 25c: 120A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 4.5mohm @ 75A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 210 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 9620 PF @ 50 V; Power Dissipation (Max): 370W (Tc);
Supplier Name	Yangjiang RUI XIAO Enterprise Co., Ltd.	Shenzhen Dulcimer Technology Co., Ltd.	Valve Audio Connexion	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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