Original Nce40h12 40V 120A 130W Mosfet Transistor N-Channel

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Details
Company Profile

Price

Min. Order Reference FOB Price

2000 Pieces US$0.15 / Piece

Sepcifications

  • Encapsulation Structure Chip Transistor
  • Installation Plug-in Triode
  • Material Silicon
  • Transport Package Standard
  • Specification Standard
  • Origin Original
  • Drain Source Voltage (Vdss) 40V
  • Continuous Drain Current (ID) 120A
  • Power Dissipation (Pd) 130W
  • Drain Source on Resistance (RDS(on)@Vgs, 4mΩ@10V,20A
  • Gate Threshold Voltage (Vgs(Th)@ID) 2.5V@250ua
  • Type N Channel

Product Description

Original NCE40H12 40V 120A 130W Mosfet Transistor N-Channel Provide bom serice/Contact for more than 100,000 components Attribute Value Category Triode/MOS Tube/Transistor/MOSFETs Datasheet Wuxi NCE Power Semiconductor NCE40H12 Drain Source Voltage (Vdss) 40V Continuous Drain Current ...

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Transaction Info
Price US $ 0.15/ Piece US $ 4,200.00-4,300.00/ Piece US $ 0.001-0.12/ Piece US $ 3,000.00-3,500.00/ Piece US $ 3,500.00-3,600.00/ Piece
Min Order 2000 Pieces 1 Pieces 20 Pieces 1 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms T/T, Western Union, Paypal T/T T/T, D/P, Western Union, Paypal, Money Gram T/T T/T
Quality Control
Product Certification - - RoHS, ISO - -
Management System Certification GMP - ISO 9001 - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe - North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe - -
Annual Export Revenue - - - - -
Business Model OEM - Own Brand - -
Average Lead Time - - Off-season: 1 Month(s) - -
Product Attributes
Specification
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Material: Silicon;
Drain Source Voltage (Vdss): 40V;
Continuous Drain Current (ID): 120A;
Power Dissipation (Pd): 130W;
Drain Source on Resistance (RDS(on)@Vgs,: 4mΩ@10V,20A;
Gate Threshold Voltage (Vgs(Th)@ID): 2.5V@250ua;
Type: N Channel;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Function: Switch Transistor;
Material: Silicon;
Vdss: 60V;
ID: -8A;
Pd: 4.1W;
RDS(on) Typical: 42mohm(Vgs=10V);
RDS(on)Max: 52mohm(Vgs=10V);
Vth (Max): -2.8V;
CISS: 2972PF;
Crss: 101PF;
Spq: 5000PCS/Reel;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Installation: Vertical, Plate up or Down;
Function: Power Triode;
Material: Metal-Ceramic;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

Valve Audio Connexion

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Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier

Valve Audio Connexion

China Supplier - Gold Member Audited Supplier