Bipolar PNP Audio Power Transistor 2SA1943, Integrated Circuit, Electronic Components, IC pictures & photos

Bipolar PNP Audio Power Transistor 2SA1943, Integrated Circuit, Electronic Components, IC

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Price

Purchase Qty. Reference FOB Price

100-999 Pieces US$0.80

1,000+ Pieces US$0.78

Sepcifications

Certification RoHS
Encapsulation Structure Triode
Installation Solder
Working Frequency High Frequency
Power Level Standard
Function Power Triode
Structure NPN
Material Plastic , Iron, Silicon
Transport Package Box
Specification to-3pL

Product Description

Product Description Original Toshiba RoHS Compliant, Pb Free Bipolar PNP Audio Power Transistor, 230V, 15A, 150W, 2-21F1A Package Power Amplifier Applications • High collector voltage: VCEO= −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity ...

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Yangjiang RUI XIAO Enterprise Co., Ltd.

Gold Member Since 2021

Rating & Reviews： 5.0/5.0

(1 Reviews)

Business Type Trading Company
Business Range Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Instruments & Meters, Lights & Lighting, Tools & Hardware
Main Products Electronic Component, IC, Transistor, Diode, Capacitor, Resistor, Switch, Relay, LED/LCD, Module
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Electronic Components Comparison

	Bipolar PNP Audio Power Transistor 2SA1943, Integrated Circuit, Electronic Components, IC Contact Now	Original Fdn335 Fdn336 Fdn337 Fdn338 Fdn339 Mosfet Transistor Contact Now	Original Transistor Irf2807 Irf2807zs Irf2807zl Mosfet Transistor To220 to-262 D2pak Contact Now	Sgt40n60fd2pn Silan Micro Agent 40A 600V Treadmill Welder Inverter IGBT Contact Now	Sgt40u120fdr1p7 Original SL Silan Microagent 40A 1200V IGBT Contact Now

Transaction Info
	Bipolar PNP Audio Power Transistor 2SA1943, Integrated Circuit, Electronic Components, IC Contact Now	Original Fdn335 Fdn336 Fdn337 Fdn338 Fdn339 Mosfet Transistor Contact Now	Original Transistor Irf2807 Irf2807zs Irf2807zl Mosfet Transistor To220 to-262 D2pak Contact Now	Sgt40n60fd2pn Silan Micro Agent 40A 600V Treadmill Welder Inverter IGBT Contact Now	Sgt40u120fdr1p7 Original SL Silan Microagent 40A 1200V IGBT Contact Now
Price	US $ 0.78-0.80/ Piece	US $ 0.08/ Piece	US $ 0.3/ Piece	US $ 0.55-0.56/ Piece	US $ 1.19-2.28/ Piece
Min Order	100 Pieces	100 Pieces	10 Pieces	600 Pieces	100 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS	RoHS	RoHS	RoHS	RoHS
Management System Certification	-	GMP	GMP	ISO 9001, GMP	ISO 9001, GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	North America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM	OEM	OEM, ODM	OEM, ODM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	Off-season: 1 Month(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Encapsulation Structure: Triode; Installation: Solder; Working Frequency: High Frequency; Power Level: Standard; Function: Power Triode; Structure: NPN; Material: Plastic , Iron, Silicon;	Encapsulation Structure: Chip Transistor; Installation: SMD Triode; Power Level: Medium Power; Structure: Mosfet; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 30 V; Current - Continuous Drain (ID) @ 25: 2.2A (Ta); Drive Voltage (Max RDS on, Min RDS on): 2.5V, 4.5V; RDS on (Max) @ ID, Vgs: 65mohm @ 2.2A, 4.5V; Vgs(Th) (Max) @ ID: 1V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 9 Nc @ 4.5 V; Vgs (Max): ±8V; Input Capacitance (CISS) (Max) @ Vds: 300 PF @ 10 V; Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: Sot-23-3; Power Dissipation (Max): 500MW (Ta); Supplier Device Package: Sot-23-3;	Encapsulation Structure: Chip Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Structure: Mosfet; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 75 V; Current - Continuous Drain (ID) @ 25: 75A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 9.4mohm @ 53A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 110 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 3270 PF @ 25 V; Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: Sot-23-3; Power Dissipation (Max): 170W (Tc); Supplier Device Package: to-220ab;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Function: Power Triode; Structure: IGBT; Material: Silicon;	Encapsulation Structure: Plastic Sealed Transistor; Installation: Plug-in Triode; Working Frequency: High Frequency; Power Level: High Power; Structure: Planar; Material: Silicon;
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