10A, 50-1000V Silicon Bridge Rectifier Diode Kbj10m

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Price

Min. Order Reference FOB Price

10000 Pieces US$0.006-0.007 / Piece

Sepcifications

Manufacturing Technology Optoelectronic Semiconductor
Material Element Semiconductor
Type Intrinsic Semiconductor
Package Bulk
Signal Processing Analog Digital Composite and Function
Application Refrigerator
Model Kbj10m
Batch Number 2016+
Brand Sy
Transport Package Bulk
Specification RoHS
Trademark sy
Origin Shanghai
Ampere 4.0
Voltage 50-1000V
Polarity as Marked
Case Molded Plastic
Lead Solder Plated

Product Description

10A, 50-1000V Silicon Bridge Rectifier Diode Kbj10M We are specialised in designing and manufacturing diodes and bridge rectifiers. If customers require, we can also offer OEM service according to customer's requirement. We provide wide products lines, including all kinds of rectifier diodes, ...

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Changzhou Shunye Electronics Co., Ltd.

Gold Member Since 2016

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Business Range Auto, Motorcycle Parts & Accessories, Computer Products, Consumer Electronics, Electrical & Electronics, Industrial Equipment & Components, Light Industry & Daily Use, Lights & Lighting, Packaging & Printing
Main Products SMD Diode; DIP Diode
Management System Certification ISO 9001
Main Markets North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic
OEM/ODM Availability Yes

Bridge Diode Comparison

	10A, 50-1000V Silicon Bridge Rectifier Diode Kbj10m Contact Now	Quick View Test Wafer Si Crystal Substrate Silicon Wafer Contact Now	Quick View High Speed Switching Nce50td120bp 1200V, 50A, Trench Fs II Fast IGBT for Motor Drives Contact Now	Quick View 12 Inch Single Crystal Dummy Silicon Wafer Contact Now	Quick View N Type Semiconductors 8 Inch Single Crystal Silicon Wafer Contact Now

Transaction Info
	10A, 50-1000V Silicon Bridge Rectifier Diode Kbj10m Contact Now	Quick View Test Wafer Si Crystal Substrate Silicon Wafer Contact Now	Quick View High Speed Switching Nce50td120bp 1200V, 50A, Trench Fs II Fast IGBT for Motor Drives Contact Now	Quick View 12 Inch Single Crystal Dummy Silicon Wafer Contact Now	Quick View N Type Semiconductors 8 Inch Single Crystal Silicon Wafer Contact Now
Price	US $ 0.006-0.007/ Piece	US $ 20/ pc	US $ 0.10-1.20/ Piece	US $ 25/ pc	US $ 20/ pc
Min Order	10000 Pieces	50 pc	600 Pieces	50 pc	50 pc
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Paypal	T/T, Paypal	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia, Mid East, Eastern Asia, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM, Own Brand	-	-	-	-
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	-	Off-season: 1-3 Month(s) Peak-season: 1 Month(s)	-	-
Product Attributes
Specification	Manufacturing Technology: Optoelectronic Semiconductor; Material: Element Semiconductor; Type: Intrinsic Semiconductor; Package: Bulk; Signal Processing: Analog Digital Composite and Function; Application: Refrigerator; Model: Kbj10m; Batch Number: 2016+; Brand: Sy; Ampere: 4.0; Voltage: 50-1000V; Polarity: as Marked; Case: Molded Plastic; Lead: Solder Plated;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Type: IGBT; Package: DIP(Dual In-line Package); Signal Processing: Analog Digital Composite and Function; Application: Air Condition; Model: Nce50td120bp; Batch Number: 2023+; Brand: Nce; Voltage: 1200V; Current: 50A; Part Number: Nce50td120bp; Device Package: to-3p; Channel: N-Channel; Applications: Air Condition; Applications2: Inverters; Applications3: Motor Drives;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;	Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Type: P-type Semiconductor; Package: Semi Standard; Signal Processing: Na; Application: Equipment; Model: Custimize; Batch Number: Na; Brand: Fsm; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished;
Supplier Name	Changzhou Shunye Electronics Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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