Original Integrated Circuits Diode Ao8822 Tssop-8 Bom Service in Stock pictures & photos

Original Integrated Circuits Diode Ao8822 Tssop-8 Bom Service in Stock

Contact Now

Get Latest Price

About this Item

Price

Min. Order Reference FOB Price

10 Pieces US$0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO
Shape ST
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method -
Function -
Working Frequency -
Structure -
Encapsulation Structure Chip Transistor
Power Level -
Material Germanium
Transport Package Package
Specification SMA/SMB/SMC/SOD-123FL
Trademark Original
Origin Original

Product Description

Original Integrated Circuits Diode AO8822 TSSOP-8 BOM service In Stock TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Diode FAQ Q1: Does your company own manufacturing facilities for electronic components? Absolutely. We operate our own advanced ...

Learn More

Shenzhen Hongjilong Technology Co., Ltd.

Diamond Member Since 2023

Audited Supplier

Rating & Reviews： 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory
Main Products Electronic Components; Transistor; Diode; Triode; Integrated Circuit; PCBA; Mosfet; Resstor; Capacitor
Number of Employees 43
Year of Establishment 2010-11-03
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Ao8822 Comparison

	Original Integrated Circuits Diode Ao8822 Tssop-8 Bom Service in Stock Contact Now	Quick View Silicongear DG100N03PB TO-220AB-D VDSS=100V RDS(ON) max. VGS=10V 10mΩ ID=77A DG-FET™ 100V N-Channel Power MOSFET Contact Now	Quick View Silicongear DG100N03S Sop-8 VDSS=100V RDS(ON) max. VGS=10V 7.8mΩ ID=13A DG-FET™ 100V N-Channel Power MOSFET Contact Now	Quick View Silicongear SG60N10S SOP-8 VDSS=60V RDS(ON),12mΩ(max.)@VGS=10V ID=9A N-Channel Power MOSFET Contact Now	Quick View Silicongear DG100N02G TO-263 (D2PAK) VDSS=100V RDS(ON)max. VGS=10V 3.9mΩ ID=100A DG-FET™ 100V N-Channel Power MOSFET Contact Now

Transaction Info
	Original Integrated Circuits Diode Ao8822 Tssop-8 Bom Service in Stock Contact Now	Quick View Silicongear DG100N03PB TO-220AB-D VDSS=100V RDS(ON) max. VGS=10V 10mΩ ID=77A DG-FET™ 100V N-Channel Power MOSFET Contact Now	Quick View Silicongear DG100N03S Sop-8 VDSS=100V RDS(ON) max. VGS=10V 7.8mΩ ID=13A DG-FET™ 100V N-Channel Power MOSFET Contact Now	Quick View Silicongear SG60N10S SOP-8 VDSS=60V RDS(ON),12mΩ(max.)@VGS=10V ID=9A N-Channel Power MOSFET Contact Now	Quick View Silicongear DG100N02G TO-263 (D2PAK) VDSS=100V RDS(ON)max. VGS=10V 3.9mΩ ID=100A DG-FET™ 100V N-Channel Power MOSFET Contact Now
Price	US $ 0.1/ Piece	US $ 0.98-1.00/ Piece	US $ 0.98-1.00/ Piece	US $ 0.98-1.00/ Piece	US $ 0.98-1.00/ Piece
Min Order	10 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram
Quality Control
Product Certification	RoHS, CE, ISO	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	-	OEM, ODM	OEM, ODM	OEM, ODM	OEM, ODM
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Optimized for synchronous rectification Low Input; Features2: Low Switching Charge; Features3: Low Miller Capacitance; Features4: Fully Characterized Capacitance and Avalanche; Application1: Battery powered circuits; Application3: BLDC Motor drive applications; Application4: Half-bridge and full-bridge topologies; Application5: Synchronous rectifier applications; Application6: Resonant mode power supplies;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Optimized for synchronous rectification Low Input; Features2: Low Switching Charge; Features3: Low Miller Capacitance; Features4: Fully Characterized Capacitance and Avalanche; Application1: Battery powered circuits; Application3: BLDC Motor drive applications; Application4: Half-bridge and full-bridge topologies; Application5: Synchronous rectifier applications; Application6: Resonant mode power supplies;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Optimized for synchronous rectification Low Input; Features2: Low Switching Charge; Features3: Low Miller Capacitance; Features4: Fully Characterized Capacitance and Avalanche; Application1: Battery powered circuits; Application3: BLDC Motor drive applications; Application4: Half-bridge and full-bridge topologies; Application5: Synchronous rectifier applications; Application6: Resonant mode power supplies;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: Optimized for synchronous rectification Low Input; Features2: Low Switching Charge; Features3: Low Miller Capacitance; Features4: Fully Characterized Capacitance and Avalanche; Application1: Battery powered circuits; Application3: BLDC Motor drive applications; Application4: Half-bridge and full-bridge topologies; Application5: Synchronous rectifier applications; Application6: Resonant mode power supplies;
Supplier Name	Shenzhen Hongjilong Technology Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.	Dongguan Merry Electronic Co., Ltd.
Select All

Contact Now

Hot Search