40A 100V Schottky Barrier Diode Mbr40100CT to-220 Video

Name: 40A 100V Schottky Barrier Diode Mbr40100CT to-220
Uploaded: 2023-08-23T13:28:41+08:00
Description: Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits Ge

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Price

Min. Order Reference FOB Price

5000 Pieces US$0.01-1.50 / Piece

Sepcifications

Manufacturing Technology Discrete Device
Material Silicon
Type N-type Semiconductor
Package to-220
Application Switching Power Supply
Model Mbr40100CT
Batch Number 2021
Brand Wxdh
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 100V
Current 40A

Product Description

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General Purpose PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

Diode Comparison

	Quick View 40A 100V Schottky Barrier Diode Mbr40100CT to-220 Contact Now	Quick View F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet Contact Now	Quick View 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G30n120d to-247 Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G60t65D to-3p Contact Now

Transaction Info
	Quick View 40A 100V Schottky Barrier Diode Mbr40100CT to-220 Contact Now	Quick View F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet Contact Now	Quick View 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G30n120d to-247 Contact Now	Quick View Insulated Gate Bipolar Transistor IGBT G60t65D to-3p Contact Now
Price	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-0.20/ Piece
Min Order	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-220; Application: Switching Power Supply; Model: Mbr40100CT; Batch Number: 2021; Brand: Wxdh; Voltage: 100V; Current: 40A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-220f; Application: Power Switching Circuit; Model: F16n60; Batch Number: 2021; Brand: Wxdh; Voltage: 600V; Current: 16A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-220f; Application: Power Switching Circuit; Model: F20n60; Batch Number: 2021; Brand: Wxdh; Voltage: 600V; Current: 20A;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-247; Application: Inverter Welding Machine, UPS; Model: G30n120d; Batch Number: 2021; Brand: Wxdh;	Manufacturing Technology: Discrete Device; Material: Silicon; Type: N-type Semiconductor; Package: to-3p; Application: Aircondition, Weldin, UPS; Model: G60t65D; Batch Number: 2021; Brand: Wxdh; Voltage: 650V; Currency: 60A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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