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US$20.00-50.00 / Piece

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34mm 50A 1200V Half Bridge IGBT Module pictures & photos

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What is 34mm 50A 1200V Half Bridge IGBT Module

Name: 34mm 50A 1200V Half Bridge IGBT Module
Uploaded: 2023-12-08T16:35:37+08:00
Description: 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the Ro

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Price

Min. Order Reference FOB Price

240 Pieces US$20.00-50.00 / Piece

Sepcifications

Manufacturing Technology Trench and Fieldstop Technology Design
Material Compound Semiconductor
Type N-type Semiconductor
Package 34mm
Application Welding, UPS, Three-Leve Inverter
Model Dhg50n120d
Batch Number 2023
Brand Wxdh
Transport Package Box
Trademark WXDH
Origin Wuxi, China
Voltage 1200V
Current 50A

Product Description

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. Features Low gate charge Excellent switching speed Easy paralleling capability due ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC.
Number of Employees 156
Year of Establishment 2004-12-07
Management System Certification ISO9001:2015, ISO14001:2015, IATF16949
Average Lead Time Peak Season Lead Time: 1-3 months
Off Season Lead Time: one month

IGBT Comparison

	Quick View 34mm 50A 1200V Half Bridge IGBT Module Contact Now	Quick View 7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f Contact Now	Quick View 12A 100V N-Channel Enhancement Mode Power Mosfet DHD10n10 to-252 Contact Now	Quick View 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 Contact Now	Quick View 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 Contact Now

Transaction Info
	Quick View 34mm 50A 1200V Half Bridge IGBT Module Contact Now	Quick View 7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f Contact Now	Quick View 12A 100V N-Channel Enhancement Mode Power Mosfet DHD10n10 to-252 Contact Now	Quick View 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 Contact Now	Quick View 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 Contact Now
Price	US $ 20.00-50.00/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece	US $ 0.01-1.50/ Piece
Min Order	240 Pieces	5000 Pieces	5000 Pieces	5000 Pieces	5000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T	L/C, T/T
Quality Control
Management System Certification	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949	ISO 9001, ISO 14001, IATF16949
Trade Capacity
Export Markets	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand	Own Brand	Own Brand	Own Brand	Own Brand
Average Lead Time	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)	Off-season: within 15 Day(s) Peak-season: 1 Month(s)
Product Attributes
Specification	Manufacturing Technology: Trench and Fieldstop Technology Design; Material: Compound Semiconductor; Type: N-type Semiconductor; Package: 34mm; Application: Welding, UPS, Three-Leve Inverter; Model: Dhg50n120d; Batch Number: 2023; Brand: Wxdh; Voltage: 1200V; Current: 50A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-220f; Application: Power Supply; Model: Dhfsj7n65; Batch Number: 2021; Brand: Wxdh; Voltage: 650V; Current: 7A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-252; Application: Power Supply; Model: DHD10n10; Batch Number: 2021; Brand: Wxdh; Voltage: 100V; Current: 12A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: P-type Semiconductor; Package: to-252; Application: Power Supply; Model: DHD85p03; Batch Number: 2021; Brand: Wxdh; Voltage: 30V; Current: 85A;	Manufacturing Technology: Discrete Device; Material: Metal-Oxide Semiconductor; Type: N-type Semiconductor; Package: to-263; Application: Power Supply; Model: Dhesj11n65; Batch Number: 2021; Brand: Wxdh; Voltage: 650V; Current: 11A;
Supplier Name	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd	Jiangsu Donghai Semiconductor Co.,Ltd
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