6,273 N Channel Power Mosfet
results from165 suppliers
800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off
- Voltage: 800V
- Current: 7A
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Metal-Oxide Semiconductor
- Package: to-220f
60V 82A Nce60p82ak Nce P-Channel Enhancement Mode Power Mosfet
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: P-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: BMS
Nce6003y Nce N-Channel Enhancement Mode Power Mosfet
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: P-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: Battery Switch
110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e
- Manufacturing Technology: Discrete Device
- Material: Metal-Oxide Semiconductor
- Type: N-type Semiconductor
- Package: to-220
- Application: Power Switching Applications,Electric Tools
- Model: Dh066n06e
P-channel Enhancement Mode Power MOSFET JMTL2301C SOT-23
- Application: electronic product
- Batch Number: 2022+
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Model: JMTL2301C
- Package: SOT-23
-40V -13A Nce40p13s Nce P-Channel Enhancement Mode Power Mosfet for Power Switching Application
- Encapsulation Structure: Chip Transistor
- Application: Pwmpower Switching Application
- Certification: RoHS
- Voltage: -40V
- Current: -13A
- Channel: P-Channel Mosfet
21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247
- Manufacturing Technology: Discrete Device
- Material: Metal-Oxide Semiconductor
- Type: N-type Semiconductor
- Package: to-247
- Application: UPS,Pfc,SMPS
- Model: Dhsj21n65W
Nce40p07s Nce P-Channel Enhancement Mode Power Mosfet
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: P-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: BMS
5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Metal-Oxide Semiconductor
- Package: to-251b
- Application: Power Switching Circuit
- Batch Number: 2022
Solar/UPS High Voltage Single N-Channel Power Mosfet
- Manufacturing Technology: Integrated Circuits Device
- Material: Compound Semiconductor
- Type: N-type Semiconductor
- Package: QFP/PFP
- Signal Processing: Analog Digital Composite and Function
- Application: Solar Cell
Ncep15t14 Nce N-Channel Super Trench Power Mosfet
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: DIP(Dual In-line Package)
- Signal Processing: Analog Digital Composite and Function
- Application: DC/DC Converter
Photovoltaic Systems To252 Package Osg80r900df N-Channel 800W 900V Power Mosfet
- Certification: RoHS, ISO
- Shape: Metal Porcelain Tube
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Switch Transistor
- Working Frequency: High Frequency
Ready Stock Nce3401 Nce P-Channel Enhancement Mode Power Transistor Mosfet with Sot-23 for Use as a Load Switch or in PWM Applications
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: P-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: PWM Application
20V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WM02P160R
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-Channel 800W 900V Power Mosfet To252 Package Osg80r900df
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: Refrigerator
To220f Osg55r190FF Vds-600V ID-60A N-Channel Power Mosfet
- Certification: RoHS, ISO
- Shape: ST
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Switch Transistor
- Working Frequency: High Frequency
Enhancement Mode N-Channel Power MOSFET Fetures Applications The GreenMOS® high voltage MOSFET Oriental-OSG60R150PF
- Encapsulation Structure: TO-220
- Application: PC power,LED lighting
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
G17 -18V -7A P-Channel New Original Electronic Components Power IGBT Mosfet
- Certification: RoHS, ISO
- Shape: SMD
- Function: Switch Transistor
- Structure: Trench
- Encapsulation Structure: Plastic Sealed Transistor
- Power Level: Small Power
Cjac40sn03 Pdfnwb5*6-8L Plastic-Encapsulate N-Channel Power Mosfets
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: Plastic Sealed Transistor
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Packing: Carton Box
- Standard: CJAC40SN03 PDFNWB5*6-8L
LSB65R041GF Lonten N-channel 650V, 78A, 0.041Ω LonFETTM Power MOSFET
- Encapsulation Structure: Chip Transistor
- Application: LED Drive Power Supply, Medical Power Supply
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Color: Black
- Structure: to-3p
Transistors - Fets K3115 2sk3115 Original Nec N-Channel Power Mosfet
- Shape: DIP/SMD
- Shielding Type: N/a
- Cooling Method: N/a
- Function: N/a
- Working Frequency: N/a
- Structure: N/a
20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L
- Manufacturing Technology: Discrete Device
- Material: Sic
- Type: N-type Semiconductor
- Package: to-247-3L
- Application: Solar Inverters
- Model: Dcc020m65g2
100V N-Channel Power MOSFET Single Fetures Applications charge Capacitance TO-252 / Silicongear-DG100N16D
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-252
- Material: Silicon
1200V/10A TD5G10120D N-Channel Advanced Power Mosfet
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
New Original IC Chips Infineon Irfr4105trpbf Single N-Channel Hexfet Power Mosfet Vdss 55V; RDS (on) 0.045 Ohm; ID 27A; Pd 68W in Stock
- shape: D-Pak (to-252AA)
- Conductive Type: Unipolar Integrated Circuit
- Integration: SSI
- Technics: Semiconductor IC
- Packing: T/R
- Standard: 6.7056x2.38x2.3876mm
LSG65R380GT TO-252 N-channel 650V, 11A, 0.38Ω LonFETTM Power MOSFET
- Encapsulation Structure: TO-252
- Application: Power faction correction (PFC),SMPS,UPS
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Color: Black
- Structure: Planar
20V P-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WMR12P02T1
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Structure: Planar
- Encapsulation Structure: DFN2020-6L
- Material: Silicon
- Features1: Extremely Low Switching Loss
600V N-Channel Super Junction MOSFET Fetures Applications N-Ch SJ MOS (S3) ESD Zener Application SMPS, UPS, PFC, TELECOM, SemiHow-HCS60R290S
- Encapsulation Structure: TO-220FS
- Application: SMPS, UPS, PFC, etc..
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
#Power Mosfet #Irlml6244trpbf #Infineon To252 N-Channel 20 V 6.3A Sot-23
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: SMD
- Signal Processing: Switch
- Application: Radio
2N65F/4N65F/4NE65F/6N65F/7N65F/7NE65F/8N65F/10N65/12N65F/20N65F SERIES 650V N-CHANNEL POWER MOSFET WITH ITO-220AB PACKAGE
- Encapsulation Structure: metal Sealed
- Application: Electronic Products
- Certification: RoHS, ISO
- Luminous Intensity: NO LIGHT
- Color: NO LIGHT
- Structure: Planar
25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b
- Manufacturing Technology: Discrete Device
- Material: Metal-Oxide Semiconductor
- Type: N-type Semiconductor
- Package: to-252b
- Application: Power Switching, Converters, Full Bridge Control
- Model: D25n10
N-Channel Advanced Power MOSFET Trench MOSFET Manufacture Fetures Applications Diode RU6199R
- Encapsulation Structure: TO-220
- Application: SMPS
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
SGP2045V-20V P-CHANNEL Power MOSFET siliconegear
- Features1: Glass Passivated Chip
- Features2: Low Forward Voltage Drop
- Features3: Ideal for Printed Circuit Board
- Features4: High Surge Current Capability
- Packing: Plastic Package
- Standard: SOT-23 TO-92 SC70
650V N-Channel Power MOSFET Single Fetures Applications charge Capacitance TO-252 / Silicongear-SG650N07D
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-252
- Material: Silicon
Super Junction N-Channel Power NCE65TF099D,NCE65TF099,NCE65TF099F MOSFET
- shape: Flat
- Conductive Type: Unipolar Integrated Circuit
- Integration: LSI
- Technics: Thin Film IC
- Port: Shenzhen
- Production Capacity: 10000000
Battery Protection Solar Inverter Vds-800V 840A RDS (ON) for N-Channel Power Mosfet
- Certification: RoHS, ISO
- Shape: Metal Porcelain Tube
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
17A 650V N-Channel Super Junction Power Mosfet Dhfsj17n65 to-220f
- Manufacturing Technology: Discrete Device
- Material: Metal-Oxide Semiconductor
- Type: N-type Semiconductor
- Package: to-220f
- Application: Power Switching Applications
- Model: Dhfsj17n65
N-Channel Small Signal Trench MOSFET Fetures Applications Diode power Low Gate Charge Wayon-WM10N35M2
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: SOT-23-3L
- Material: Silicon
SG100N03E 100V N-Channel Power MOSFET silicongear
- Features1: Glass Passivated Chip
- Features2: Low Forward Voltage Drop
- Features3: Ideal for Printed Circuit Board
- Features4: High Surge Current Capability
- Packing: Plastic Package
- Standard: SOT-23 TO-92 SC70
Ncep063n85g Nce N-Channel Super Trench II Power Mosfet
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: BMS