6,150 N Channel Power Mosfet
results from136 suppliers
LSD65R650HT N-channel 650V, 7A1), 0.65Ω LonFETTM Power MOSFET
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO-263-7L Fetures Applications YJD212060B7GHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263-7L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
LND20N65 TO-220F Package N-channel 650V, 20A Power MOSFET
- Encapsulation Structure: TO-220F
- Application: Power factor correction,Switched mode power supply
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Color: Black
- Structure: Planar
N-Channel Advanced Power MOSFET Trench MOSFET Manufacture Fetures Applications Diode RU6199R
- Encapsulation Structure: TO-220
- Application: SMPS
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Structure: Planar
- Material: Silicon
650V/17.7A 210mΩ HCFL65R210 N-Channel Advanced Power Mosfet
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
LNH4N80 TO-251 package N-channel 800V, 4A Power MOSFET
- Encapsulation Structure: TO-251
- Application: Power factor correction,LED driver,power supply
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Color: Black
- Structure: Planar
Silicon Carbide Power MOSFET(N-Channel Enhancement) VDS 1200V ID(25°C) 78A RDS(on) 30mΩ TO-247AB Fetures Applications YJD212030NCTGHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-247AB
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: TO-263
- Installation: TO-263
- Working Frequency: TO-263
- Power Level: TO-263
- Function: Power Triode
60V N-Channel Power advanced Trench technology MOSFET Motor / Body Load Control Silicongear-SG60N04G
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-263 (D2PAK)
- Material: Silicon
80V N-Channel Enhancement Mode Power MOSFET Fetures Applications Wayon-WMM90N08TS
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO-263
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
LED Lighting Adapter To247 Osg65r080ht3zf Vds-700V ID-132A Qg-67nc Mode N-Channel Power Mosfet
- Certification: RoHS, ISO
- Shape: Metal Porcelain Tube
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Switch Transistor
- Working Frequency: High Frequency
N-channel 650V, 11A, 0.38Ω Super-Junction Power MOSFET Fetures Applications Diode Power Reactor-RMD65R380SN
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Structure: Planar
- Encapsulation Structure: PDFN5*6
- Material: Silicon
- Features1: Extremely Low Switching Loss
Silicon Carbide Power MOSFET(N-Channel Enhancement) High speed switching TO247-4L Fetures Applications YJD206525T2GHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: T2PAK
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
WMK053N10HGS 100V N-Channel Enhancement Mode Power MOSFET
- Encapsulation Structure: Chip Transistor
- Application: Power Management Switches,DC/DC Converter,LED
- Certification: RoHS, CE, ISO, CCC
- Luminous Intensity: Standard
- Color: Black
- Structure: Planar
LED Lighting To220f Osg70r500FF Vds-750V ID-30A RDS (ON) -500milliohm Qg-12.3nc N-Channel Power Mosfet
- Certification: RoHS, ISO
- Shape: Subminiature
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Switch Transistor
- Working Frequency: High Frequency
100V N-Channel Enhancement Mode Power MOSFET advanced power trench technology Way-on-WMO25N10T1
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-252
- Material: Silicon
Battery Protection Solar Inverter Vds-800V 840A RDS (ON) for N-Channel Power Mosfet
- Certification: RoHS, ISO
- Shape: Metal Porcelain Tube
- Shielding Type: Sharp Cutoff Shielding Tube
- Cooling Method: Air Cooled Tube
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
N-Channel Enhancement MOSFET Diode Fetures Applications Power Small Single MOSFETS Way-on-WM02N31M
- Certification: RoHS, CE, ISO, CCC
- Structure: Planar
- Encapsulation Structure: SOT-23
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
-60V -12A Nce60p12K Nce P-Channel Enhancement Mode Power Transistor Mosfet with to-252-2L
- Encapsulation Structure: Chip Transistor
- Application: High Side Switch for Full Bridge Converter
- Certification: RoHS
- Voltage: -60V
- Current: -12A
- Channel: P-Channel Mosfet
100V N-Channel Power MOSFET Single Fetures Applications charge Capacitance TO-220AB-D / Silicongear-DG100N16PB
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-220AB-D
- Material: Silicon
LSB65R125HT TO-247 N-channel 650V, 25A, 0.125Ω LonFETTM Power MOSFET
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
N-Channel Power Mosfet 500V Irfp450
- Function: Power Triode, Power Mosfet
- Brand Name: Original
- Lead Free Status: RoHS Compliant
- Technology: Si
- Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
- Product Category: Mosfet
20V N-Channel Enhancement Mode Power MOSFET, VDS: 20V, ID: 30A, VGS: 0.65V, fetures, applications, PDFN3*3-8L, WMQ30N02T1
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN3*3-8L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
30V N-Channel Enhancement Mode 2nd generation Power trench MOSFET Way-on-WMQ052N03LG2
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: PDFN3030-8L
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
80V N-Channel Power MOSFET Single Fetures Applications charge Capacitance TO-252 / Silicongear-SG80N07HD
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-252
- Material: Silicon
20V Common-Drain Dual N-Channel Power MOSFET trench technology Fetures Applications SOT-23-6L / Silicongear-SG2015M
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: SOT-23-6L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
-30V highest performance trench P-CHANNEL Power MOSFET Low Input Capacitance Fetures Applications Silicongear-SGP3011E
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: PDFN 3.3 x 3.3-8L
- Material: Silicon
WMS15P02T1 20V P-Channel Enhancement Mode Power MOSFET
- Certification: RoHS
- Features1: Glass Passivated Chip
- Features2: Low Forward Voltage Drop
- Features3: Ideal for Printed Circuit Board
- Features4: High Surge Current Capability
- Packing: Plastic Package
100V N-Channel Power MOSFET Low On-Resistance RDS (on) Low Gate Charge SOP-8 Fetures Applications Silicongear-DG100N03S
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: SOP-8
- Power Level: Small Power
High blocking voltage Silicon Carbide Power MOSFET(N-Channel Enhancement) TO-247-4L Fetures Applications YJD212060NCFGHQ
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: TO247-4L
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
30V N-Channel Power MOSFET Single Fetures Applications charge Capacitance TO-252 / Silicongear-DG30N17D
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-252
- Material: Silicon
100V N-Channel Power MOSFET Low On-Resistance RDS (on) Low Gate Charge TO-220AB-D Fetures Applications Silicongear-DG100N15HPB
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-220AB-D
- Power Level: Small Power
LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
Silicongear-SG30N06E 30V N-Channel Power advanced Trench technology MOSFET Low Input Capacitance Fetures Applications
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: PDFN 3.3*3.3-8L
- Material: Silicon
SOP-8 / 60V N-Channel Power MOSFET Fully Characterized Capacitance and Avalanche Fetures Applications Silicongear-DG60N02S
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: SOP-8
- Material: Silicon
100V/60.9A 4.4mΩ DG100N15Q N-Channel Advanced Power Mosfet
- Certification: RoHS, CE, ISO, CCC
- Shape: GT
- Shielding Type: Remote Cut-Off Shielding Tube
- Cooling Method: Naturally Cooled Tube
- Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
- Working Frequency: High Frequency
40V N-Channel Enhancement Mode Power MOSFET WMB100N04TS PDFN5060-8L
- Certification: RoHS, CE, ISO, CCC
- Encapsulation Structure: PDFN5060-8L
- Installation: PDFN5060-8L
- Working Frequency: PDFN5060-8L
- Power Level: PDFN5060-8L
- Function: Power Triode
60V N-Channel Power MOSFET Low On-Resistance Low Miller Charge Fetures Applications Silicongear-SG60N03LP
- Certification: RoHS, CE, ISO, CCC
- Function: Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: TO-220
- Material: Silicon
G70p02K to-252 Rectifiers Electronic Components Semiconductor P-Channel Power Transistor Mosfet with RoHS
- Certification: RoHS, ISO
- Shape: SMD
- Function: Switch Transistor
- Structure: Trench
- Encapsulation Structure: Plastic Sealed Transistor
- Power Level: Medium Power
Silicongear-SG60N10E 60V N-Channel Power MOSFET Fetures Applications Low On-Resistance Low Miller Charge
- Certification: RoHS, CE, ISO, CCC
- Function: Microwave Transistor, Switch Transistor
- Working Frequency: Low Frequency
- Structure: Planar
- Encapsulation Structure: PDFN 3.3 x 3.3-8L
- Material: Silicon