Home Electrical & Electronics Triode Wholesale Npn Transistors Price 2024 Product List

Wholesale Npn Transistors Price

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Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

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Original 4281A 4302A Transistor NPN 350V 15A 35MHz 230W Mjl4281A Mjl4302A

US$ 0.2 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: Plug-in Triode

Power Level: Medium Power

Structure: NPN

Material: Silicon

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

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Original Pdtd113ztvl Pre-Biased Bipolar Transistor (BJT) NPN to-236ab

US$ 0.019-0.025 / Piece

100 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, ISO

Encapsulation Structure: Standard

Installation: SMD Triode

Working Frequency: Standard

Power Level: Standard

Function: Standard

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

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Smmbta06lt1g Bipolar (BJT) Transistor NPN 80 V 500 Ma 100MHz 225 MW SMD Sot-23-3 Smmbta06lt3g Smmbta06lt Smmbta06

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: SMD

Cooling Method: N/a

Function: PNP

Current - Collector (IC) (Max): 500 Ma

Voltage - Collector Emitter Breakdown (M: 80 V

Vce Saturation (Max) @ Ib, IC: 250mv @ 10mA, 100mA

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

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Original Bc817-40 Single Bipolar (BJT) Transistor NPN 45V 500mA Sot-23-3

US$ 0.005-0.006 / Piece

100 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Encapsulation Structure: Standard

Application: Electronic Products

Certification: RoHS, ISO

Luminous Intensity: Standard

Color: Black

Structure: Standard

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

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MD1802fx Bipolar (BJT) Transistor NPN 700 V 10 a 57 W Through Hole Isowatt-218fx MD1802 MD1803 MD2001 MD2009 Series

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, CE

Function: NPN

Current - Collector (IC) (Max): 10 a

Voltage - Collector Emitter Breakdown (M: 700 V

Vce Saturation (Max) @ Ib, IC: 1.5V @ 1.25A, 5A

Current - Collector Cutoff (Max): 200µa

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

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Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA)

US$ 0.05 / Piece

100 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: DIP

Installation: Plug-in Triode

Power Level: Medium Power

Material: Silicon

Transistor Polarity: NPN

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

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Original Bipolar (BJT) Transistor NPN 2sc2873 2SA1213

US$ 0.03 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: SMD Triode

Power Level: Medium Power

Structure: NPN

Material: Silicon

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

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Good Quality Bc848b Bipolar (BJT) Transistor NPN 30V 100mA 100MHz Bc848

US$ 0.008 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: SMD Triode

Power Level: Medium Power

Structure: NPN

Material: Silicon

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

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Phpt61002nyclhx Bipolar (BJT) Transistor NPN 100 V 2 a 140MHz 25 W SMD Lfpak56, Power-So8 Phpt61002 Phpt61003 Phpt61006 Series

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: SMD

Function: Bipolar

Transistor Type: NPN

Current - Collector (IC) (Max): 2 a

Voltage - Collector Emitter Breakdown (M: 100 V

Vce Saturation (Max) @ Ib, IC: 300mv @ 200mA, 2A

NPN triode Transistors 9013 SOT-23

NPN triode Transistors 9013 SOT-23

NPN triode Transistors 9013 SOT-23

NPN triode Transistors 9013 SOT-23

NPN triode Transistors 9013 SOT-23

NPN triode Transistors 9013 SOT-23

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NPN triode Transistors 9013 SOT-23

10000 Pieces (MOQ)

Kunshan Huateng Electronics Co., Ltd.

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Manufacturing Technology: Discrete Device

Material: Element Semiconductor

Type: NPN

Package: SOT-23

Signal Processing: Analog Digital Composite and Function

Application: electronic product

Buh515D High Voltage Fast-Switching NPN Power Transistor

Buh515D High Voltage Fast-Switching NPN Power Transistor

Buh515D High Voltage Fast-Switching NPN Power Transistor

Buh515D High Voltage Fast-Switching NPN Power Transistor

Buh515D High Voltage Fast-Switching NPN Power Transistor

Buh515D High Voltage Fast-Switching NPN Power Transistor

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Buh515D High Voltage Fast-Switching NPN Power Transistor

US$ 1.02-2 / Piece

10 Pieces (MOQ)

Shenzhen Jin Da Peng Technology Co., Ltd.

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shape: Flat

Conductive Type: Unipolar Integrated Circuit

Integration: GSI

Technics: Thick Film IC

Brand Name: Original

Lead Free Status: RoHS Compliant

NPN triode Transistors 9014 SOT-23

NPN triode Transistors 9014 SOT-23

NPN triode Transistors 9014 SOT-23

NPN triode Transistors 9014 SOT-23

NPN triode Transistors 9014 SOT-23

NPN triode Transistors 9014 SOT-23

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NPN triode Transistors 9014 SOT-23

1000000 Pieces (MOQ)

Kunshan Huateng Electronics Co., Ltd.

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Manufacturing Technology: Discrete Device

Material: Element Semiconductor

Type: NPN

Package: SOT-23

Signal Processing: Analog Digital Composite and Function

Application: electronic product

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

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Original 2sc5200 2SA1943 Pair Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W

US$ 0.5 / Piece

100 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: Plug-in Triode

Power Level: Medium Power

Material: Silicon

Transistor Type: NPN

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

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Pdtc123yu, 115 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 200 MW SMD Sot-323 Pdtc123yu Pdtc123

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: SMD

Shielding Type: Sharp Cutoff Shielding Tube

Function: Bipolar Transistor

Encapsulation Structure: SMD

Material: Germanium

Transistor Type: NPN - Pre-Biased

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

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Bc817-40 Bc817-40r13 Bipolar (BJT) Transistor NPN 45 V 800 Ma 100MHz 310 MW SMD Sot-23-3 (TO-236) Bc817 Series

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, CE

Function: NPN

Fet Typecurrent - Collector (IC) (Max): 800 Ma

Voltage - Collector Emitter Breakdown (M: 45 V

Vce Saturation (Max) @ Ib, IC: 700mv @ 50mA, 500mA

Current - Collector Cutoff (Max): 100na (Icbo)

Silicon NPN Power Transistors Bdv65c

Silicon NPN Power Transistors Bdv65c

Silicon NPN Power Transistors Bdv65c

Silicon NPN Power Transistors Bdv65c

Silicon NPN Power Transistors Bdv65c

Silicon NPN Power Transistors Bdv65c

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Silicon NPN Power Transistors Bdv65c

US$ 0.9-1.87 / Piece

10 Pieces (MOQ)

Shenzhen Jin Da Peng Technology Co., Ltd.

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shape: DIP

Conductive Type: Unipolar Integrated Circuit

Integration: GSI

Technics: Thick Film IC

Brand Name: Original

Lead Free Status: RoHS Compliant

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

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2n5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 300MHz 625 MW DIP to-92 (TO-226) 2n5551

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: DIP

Function: Bipolar

Transistor Type: NPN

Current - Collector (IC) (Max): 600 Ma

Voltage - Collector Emitter Breakdown (M: 160 V

Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

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Mmbt5551 Bipolar (BJT) Transistor NPN 160 V 600 Ma 225 MW Surface Mount Sot-23-3 (TO-236) Mmbt5551lt1g Mmbt5550 Mmbt589 Mmbt5401 Mmbt5088 Series

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, CE

Function: NPN

Fet Typecurrent - Collector (IC) (Max): 600 Ma

Voltage - Collector Emitter Breakdown (M: 160 V

Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA

Current - Collector Cutoff (Max): 100na

NPN triode Transistors 3904 SOT-23

NPN triode Transistors 3904 SOT-23

NPN triode Transistors 3904 SOT-23

NPN triode Transistors 3904 SOT-23

NPN triode Transistors 3904 SOT-23

NPN triode Transistors 3904 SOT-23

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NPN triode Transistors 3904 SOT-23

US$ 0.02-0.025 / Piece

100000 Pieces (MOQ)

Kunshan Huateng Electronics Co., Ltd.

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Manufacturing Technology: Discrete Device

Material: Element Semiconductor

Type: NPN

Package: SOT-23

Signal Processing: Analog Digital Composite and Function

Application: electronic product

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

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Mjd122 Bipolar (BJT) Transistor NPN Darlington 100 V 8 a 4MHz 1.75 W SMD Dpak Mjd122t4g

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: SMD

Cooling Method: N/a

Function: NPN - Darlington

Current - Collector (IC) (Max): 8 a

Voltage - Collector Emitter Breakdown (M: 100 V

Vce Saturation (Max) @ Ib, IC: 4V @ 80mA, 8A

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

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2sc3330t 2sc1907 2SA562 2SA608 New&Original Bjt Signal Bipolar Transtr NPN Transistor

US$ 0.001-0.1 / Piece

10 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, CE, ISO, CCC

Shape: Metal Porcelain Tube

Shielding Type: Remote Cut-Off Shielding Tube

Cooling Method: Naturally Cooled Tube

Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

Working Frequency: High Frequency

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

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Original Bdx53c Bdx54c Bdx54b Bdx53b in Stock Bdx53 Bdx54 Bipolar (BJT) Transistor NPN Darlington 100V 8A 60W Bom List

US$ 0.2 / Piece

100 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: Plug-in Triode

Power Level: Medium Power

Material: Silicon

Transistor Type: NPN - Darlington

Original 2n2222 NPN Bipolar Transistor 2n2222A

Original 2n2222 NPN Bipolar Transistor 2n2222A

Original 2n2222 NPN Bipolar Transistor 2n2222A

Original 2n2222 NPN Bipolar Transistor 2n2222A

Original 2n2222 NPN Bipolar Transistor 2n2222A

Original 2n2222 NPN Bipolar Transistor 2n2222A

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Original 2n2222 NPN Bipolar Transistor 2n2222A

US$ 0.04 / Piece

100 Pieces (MOQ)

Shenzhen Jin Da Peng Technology Co., Ltd.

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shape: DIP

Conductive Type: Unipolar Integrated Circuit

Integration: GSI

Technics: Thin Film IC

Description: NPN Med Pwr Gen PUR

Lead Free Status: RoHS Compliant

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

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Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: DIP

Function: Bipolar Transistor

Encapsulation Structure: SMD

Material: Germanium

Transistor Type: NPN - Pre-Biased

Current - Collector (IC) (Max): 100 Ma

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

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Uln2803APG Bipolar (BJT) Transistor Array 8 NPN 50V 500mA 1.47W Uln2803 Uln2803A

US$ 0.06 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS

Encapsulation Structure: Chip Transistor

Installation: Plug-in Triode

Power Level: Medium Power

Structure: NPN

Material: Silicon

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

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Bzx84c3V9 Sot23 Zener Diode NPN Transistor Bom PCBA PCB SMT Service

US$ 0.1-0.5 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: DIP/SMD

Shielding Type: N/a

Cooling Method: N/a

Function: N/a

Working Frequency: N/a

Structure: N/a

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

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New and Original Bc817-40 Bipolar Transistors Bjt Sot-23 45V 800mA NPN

US$ 0.001-0.1 / Piece

10 Pieces (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Certification: RoHS, CE, ISO, CCC

Shape: Metal Porcelain Tube

Shielding Type: Remote Cut-Off Shielding Tube

Cooling Method: Naturally Cooled Tube

Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

Working Frequency: High Frequency

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

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Bc846b Bipolar (BJT) Transistor NPN 65 V 100 Ma 100MHz 200 MW SMD Sot-23 Bc846b Bc846

US$ 0.01-1 / Piece

1 Piece (MOQ)

ShenZhen Nova Semiconductor Co., Ltd.

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Shape: SMD

Cooling Method: N/a

Function: PNP

Current - Collector (IC) (Max): 100 Ma

Voltage - Collector Emitter Breakdown (M: 65 V

Vce Saturation (Max) @ Ib, IC: 500mv @ 5mA, 100mA

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

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Original Transistor 2sc5200 2SA1943 1943 5200 Silicon PNP Power Amplifier Transistors to-3p

US$ 1-1.238 / Piece

500 Pieces (MOQ)

Shenzhen Jin Da Peng Technology Co., Ltd.

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Function: Switch Transistor

Encapsulation Structure: Chip Transistor

Material: Silicon

Product Category: Bipolar Transistors - Bjt

Transistor Polarity: NPN

Series: 2sc5200

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

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Spw47n60c3 Hot Sale Power NPN Mosfet Transistor Equivalent

US$ 4-5 / Piece

10 Pieces (MOQ)

Shenzhen Jin Da Peng Technology Co., Ltd.

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shape: DIP

Conductive Type: Depletion Type

Technics: Semiconductor IC

Channel Type: N-Channel

Description: Mosfet N-CH 650V 47A To247-3 Coolmos C3

Product Category: Mosfet

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