Low Price 5n20A 200V 5A Mosfet Transistor for Solar Energy

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Details
Company Profile

Price

Min. Order Reference FOB Price

20 Pieces US$0.074-0.099 / Piece

Sepcifications

  • Certification RoHS, ISO
  • Shape Through Hole
  • Function Switch Transistor
  • Structure Planar
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level Medium Power
  • Material Silicon
  • Transport Package Carton
  • Trademark GOFORD
  • Origin China
  • Vdss 200V
  • ID 5A
  • RDS 440 Mr
  • Pd 78W
  • Package to-251
  • Stock in Stock
  • Sample Available
  • Lead Free Status Pb-Free
  • Spq 72PCS/Tube

Product Description

Product Description Low Price 5N20A 200V 5A Mosfet Transistor for Solar Energy Part Number 5N20A VDSS 200V ID 5A RDS 440mΩ @ vgs=10V Vth 1.55V Package TO-251 Ciss 255 pF Crss 2.3 pF Datasheet You may like For more products details, please contact us ! ...

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200V Mosfet Comparison
Transaction Info
Price US $ 0.074-0.099/ Piece US $ 0.01-1.00/ Piece US $ 0.01-1.00/ Piece US $ 0.01-1.00/ Piece US $ 0.01-1.00/ Piece
Min Order 20 Pieces 1 Pieces 1 Pieces 1 Pieces 1 Pieces
Trade Terms - - - - -
Payment Terms T/T, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal T/T, Western Union, Paypal
Quality Control
Product Certification RoHS, ISO - - - -
Management System Certification ISO 9001 GMP GMP GMP GMP
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model Own Brand OEM OEM OEM OEM
Average Lead Time Off-season: 1 Month(s) - - - -
Product Attributes
Specification
Shape: Through Hole;
Function: Switch Transistor;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Vdss: 200V;
ID: 5A;
RDS: 440 Mr;
Pd: 78W;
Package: to-251;
Stock: in Stock;
Sample: Available;
Lead Free Status: Pb-Free;
Spq: 72PCS/Tube;
Shape: DIP;
Function: Bipolar;
Transistor Type: NPN;
Current - Collector (IC) (Max): 600 Ma;
Voltage - Collector Emitter Breakdown (M: 150 V;
Vce Saturation (Max) @ Ib, IC: 500mv @ 5mA, 50mA;
Current - Collector Cutoff (Max): 50na (Icbo);
DC Current Gain (Hfe) (Min) @ IC, Vce: 60 @ 10mA, 5V;
Power - Max: 625 MW;
Frequency - Transition: 300MHz;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-226-3, to-92-3 Long Body;
Base Product Number: 2n5401;
Shape: DIP;
Function: Bipolar;
Transistor Type: NPN;
Current - Collector (IC) (Max): 600 Ma;
Voltage - Collector Emitter Breakdown (M: 160 V;
Vce Saturation (Max) @ Ib, IC: 200mv @ 5mA, 50mA;
Current - Collector Cutoff (Max): 50na (Icbo);
DC Current Gain (Hfe) (Min) @ IC, Vce: 80 @ 10mA, 5V;
Power - Max: 625 MW;
Frequency - Transition: 300MHz;
Operating Temperature: -55°c ~ 150°c (Tj);
Mounting Type: Through Hole;
Supplier Device Package: to-226-3, to-92-3 Long Body;
Base Product Number: 2n5551;
Shape: SMD;
Function: Mosfet;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 600 V;
Continuous Drain (ID) @ 25°c: 2.6A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 10V;
RDS on (Max) @ ID, Vgs: 3.4ohm @ 500mA, 10V;
Vgs(Th) (Max) @ ID: 3.5V @ 40µa;
Gate Charge (Qg) (Max) @ Vgs: 4.6 Nc @ 10 V;
Vgs (Max): ±20V;
Input Capacitance (CISS) (Max) @ Vds: 93 PF @ 100 V;
Power Dissipation (Max): 5W (Tc);
Operating Temperature: -40°c ~ 150°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: Pg-Sot223-3;
Base Product Number: Ipn60r3;
Shape: SMD;
Function: Mosfet;
Fet Type: N-Channel;
Technology: Mosfet (Metal Oxide);
Drain to Source Voltage (Vdss): 100 V;
Continuous Drain (ID) @ 25°c: 25A (Tc);
Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V;
RDS on (Max) @ ID, Vgs: 35mohm @ 12.5A, 10V;
Vgs(Th) (Max) @ ID: 2.5V @ 250µa;
Gate Charge (Qg) (Max) @ Vgs: 52 Nc @ 5 V;
Vgs (Max): ±16V;
Input Capacitance (CISS) (Max) @ Vds: 1710 PF @ 25 V;
Power Dissipation (Max): 100W (Tc);
Operating Temperature: -55°c ~ 175°c (Tj);
Mounting Type: Surface Mount;
Supplier Device Package: Dpak;
Base Product Number: Std25;
Supplier Name

Wuxi Goford Semiconductor Co., Ltd.

China Supplier - Gold Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

China Supplier - Diamond Member Audited Supplier