super junction Mosfet

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LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET pictures & photos

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What is LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET

Name: LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET
Uploaded: 2023-09-18T13:46:52+08:00
Description: LSB65R099GF/LSD65R099GF/LSE65R099GF N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET More Product Models: LND4N65,LND7N65,LND10N65,LND12N65,LND13N50, LND16N65,LND18N50,LND20N65 Product Descri

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Price

Purchase Qty. Reference FOB Price

1,000-2,999 Pieces US$1.60

3,000+ Pieces US$1.50

Sepcifications

Certification RoHS, CE, ISO, CCC
Shape GT
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method Naturally Cooled Tube
Function High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency High Frequency
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Transport Package Plastic Package
Specification TO-247
Trademark Merry
Origin Guangdong, China
Features1 LowRDS(on)
Features2 Lowgatecharge(typ.Qg=41.9nC)
Features3 100%UIStested
Features4 RoHScompliant
Application3 Power Factor Correction (Pfc)
Application4 Switchedmodepowersupplies.
Application6 LEDdriver.

Product Description

LSB65R099GF/LSD65R099GF/LSE65R099GF N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET More Product Models: LND4N65,LND7N65,LND10N65,LND12N65,LND13N50, LND16N65,LND18N50,LND20N65 Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory
Business Range Consumer Electronics, Electrical & Electronics, Light Industry & Daily Use, Lights & Lighting
Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky Diodes, Super Junction Mosfets, Tvs ESD Protection
Type of Ownership Limited Company
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

super junction Mosfet Comparison

	Quick View LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET Contact Now	Quick View 60h65 Stgwa60h65dfb IGBT Trench Field Stop Transistor 650V 80A 375W to-247-3 Stgw60h65dfb Stgwt60h65dfb Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now	Quick View N-Channel 200V 9.3A SMD D2pak Irf630nstrlpbf Mosfet Transistor Hexfet Series Contact Now

Transaction Info
	Quick View LSB65R099GF TO-247 Lonten N-channel 650V, 40A, 0.099Ω LonFETTM Power MOSFET Contact Now	Quick View 60h65 Stgwa60h65dfb IGBT Trench Field Stop Transistor 650V 80A 375W to-247-3 Stgw60h65dfb Stgwt60h65dfb Contact Now	Quick View N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole to-220ab Irl510pbf Mosfet Transistors Contact Now	Quick View Si7469dp Transistor P-Channel 80 V 28A (Tc) 5.2W (Ta) 83.3W (Tc) Si7469dp-T1-E3 Contact Now	Quick View N-Channel 200V 9.3A SMD D2pak Irf630nstrlpbf Mosfet Transistor Hexfet Series Contact Now
Price	US $ 1.50-1.60/ Piece	US $ 2/ Piece	US $ 0.001-0.10/ Piece	US $ 0.01-1.00/ Piece	US $ 0.01-1.00/ Piece
Min Order	1000 Pieces	100 Pieces	1 Pieces	1 Pieces	1 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Western Union, Paypal	T/T, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	-	-	-
Management System Certification	-	GMP	GMP	GMP	GMP
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	OEM, ODM	OEM	OEM	OEM	OEM
Average Lead Time	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-	-	-
Product Attributes
Specification	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor; Working Frequency: High Frequency; Structure: Planar; Encapsulation Structure: Chip Transistor; Power Level: High Power; Material: Silicon; Features1: LowRDS(on); Features2: Lowgatecharge(typ.Qg=41.9nC); Features3: 100%UIStested; Features4: RoHScompliant; Application3: Power Factor Correction (Pfc); Application4: Switchedmodepowersupplies.; Application6: LEDdriver.;	Shape: Through Hole; Function: Mosfet; Structure: DIP; Encapsulation Structure: Chip Transistor; Material: Silicon; IGBT Type: Trench Field Stop; Voltage - Collector Emitter Breakdown (M: 650 V; Current - Collector (IC) (Max): 80 a; Current - Collector Pulsed (Icm): 240 a; Vce(on) (Max) @ Vge, IC: 2V @ 15V, 60A; Power - Max: 375 W; Switching Energy: 1.59mj (on), 900µj (off); Input Type: Standard; Gate Charge: 306 Nc; Td (on/off) @ 25°c: 66ns/210ns; Test Condition: 400V, 60A, 10ohm, 15V; Reverse Recovery Time (Trr): 60 Ns;	Shape: Through Hole; Function: Mosfet; Encapsulation Structure: Chip Transistor; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 100 V; Continuous Drain (ID) @ 25°c: 5.6A (Tc); Drive Voltage: 4V, 5V; RDS on (Max) @ ID, Vgs: 540mohm @ 3.4A, 5V; Vgs(Th) (Max) @ ID: 2V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 6.1 Nc @ 5 V; Vgs (Max): 10V; Input Capacitance (CISS) (Max) @ Vds: 250 PF @ 25 V; Power Dissipation (Max): 43W (Tc); Operating Temperature: -55°c ~ 175°c (Tj); Mounting Type: Through Hole; Package / Case: to-220-3;	Shielding Type: Standard; Cooling Method: Standard; Function: N/a; Encapsulation Structure: SMD; Power Level: Standard; Material: Standard; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 80 V; Current - Continuous Drain (ID) @ 25c: 28A (Tc); Drive Voltage (Max RDS on, Min RDS on): 4.5V, 10V; RDS on (Max) @ ID, Vgs: 25mohm @ 10.2A, 10V; Vgs(Th) (Max) @ ID: 3V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 160 Nc @ 10 V; Vgs (Max): ±20V; Input Capacitance (CISS) (Max) @ Vds: 4700 PF @ 40 V; Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc); Operating Temperature: -55°c ~ 150°c (Tj); Mounting Type: Surface Mount; Package / Case: Powerpak® So-8; Base Product Number: Si7469;	Shape: DIP; Shielding Type: Standard; Cooling Method: Standard; Function: N/a; Working Frequency: Standard; Structure: Standard; Encapsulation Structure: DIP; Power Level: Standard; Material: Standard; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 200 V; Continuous Drain (ID) @ 25°c: 9.3A (Tc); Drive Voltage (Max RDS on, Min RDS on): 10V; RDS on (Max) @ ID, Vgs: 300mohm @ 5.4A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250ua; Gate Charge (Qg) (Max) @ Vgs: 35 Nc @ 10 V; Vgs (Max): +-20V; Input Capacitance (CISS) (Max) @ Vds: 575 PF @ 25 V; Power Dissipation (Max): 82W (Tc); Operating Temperature: -55c ~ 175c (Tj); Mounting Type: Surface Mount; Supplier Device Package: D2pak; Package / Case: to-263-3, D2pak (2 Leads + Tab), to-263ab;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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