Mmbd914lt1g

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Original Integrated Circuits Mmbd914lt1g 100V 300MW Single 1V@10mA 4ns 200mA Sot-23 Switching Diode RoHS Bom Service pictures & photos

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How to Install Original Integrated Circuits Mmbd914lt1g 100V 300MW Single 1V@10mA 4ns 200mA Sot-23 Switching Diode RoHS Bom Service

Name: Original Integrated Circuits Mmbd914lt1g 100V 300MW Single 1V@10mA 4ns 200mA Sot-23 Switching Diode RoHS Bom Service
Uploaded: 2024-02-21T16:28:36+08:00
Description: Original Integrated Circuits MMBD914LT1G 100V 300mW Single 1V@10mA 4ns 200mA SOT-23 Switching Diode ROHS bom service TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFET

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Price

Min. Order Reference FOB Price

10 Pieces US$0.10 / Piece

Sepcifications

Certification RoHS, CE, ISO
Shape ST
Shielding Type Remote Cut-Off Shielding Tube
Cooling Method -
Function -
Working Frequency -
Structure -
Encapsulation Structure Chip Transistor
Power Level -
Material Germanium
Transport Package Package
Specification SMA/SMB/SMC/SOD-123FL
Trademark Original
Origin Original

Product Description

Original Integrated Circuits MMBD914LT1G 100V 300mW Single 1V@10mA 4ns 200mA SOT-23 Switching Diode ROHS bom service TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors FETs, MOSFETs Diode FAQ Q1: Does your company own manufacturing facilities for electronic ...

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Shenzhen Hongjilong Technology Co., Ltd.

Diamond Member Since 2023

Audited Supplier

Rating & Reviews： 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory
Main Products Electronic Components; Transistor; Diode; Triode; Integrated Circuit; PCBA; Mosfet; Resstor; Capacitor
Number of Employees 43
Year of Establishment 2010-11-03
Management System Certification ISO 9001
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Mmbd914lt1g Comparison

	Quick View Original Integrated Circuits Mmbd914lt1g 100V 300MW Single 1V@10mA 4ns 200mA Sot-23 Switching Diode RoHS Bom Service Contact Now	G80n60ufd Transistor IGBT Tube G80n60 for Ultrasonic Welding Machine Contact Now	New Original G4PC40ud Transistor Irg4PC40ud Contact Now	Fqpf8n80c Fairchild 8A/800V to-220 Power Mosfet, N-Channel Contact Now	New China Made Tyn812 12A 800V in-Line to-220 One-Way SCR Thyristor Contact Now

Transaction Info
	Quick View Original Integrated Circuits Mmbd914lt1g 100V 300MW Single 1V@10mA 4ns 200mA Sot-23 Switching Diode RoHS Bom Service Contact Now	G80n60ufd Transistor IGBT Tube G80n60 for Ultrasonic Welding Machine Contact Now	New Original G4PC40ud Transistor Irg4PC40ud Contact Now	Fqpf8n80c Fairchild 8A/800V to-220 Power Mosfet, N-Channel Contact Now	New China Made Tyn812 12A 800V in-Line to-220 One-Way SCR Thyristor Contact Now
Price	US $ 0.1/ Piece	US $ 0.48-9.85/ Piece	US $ 0.10-0.20/ Piece	US $ 1.4/ Piece	US $ 1.15/ Piece
Min Order	10 Pieces	500 Pieces	1 Pieces	250 Pieces	20 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal	L/C, T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO	-	-	-	-
Management System Certification	ISO 9001	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others	South America, Europe, Southeast Asia/ Mideast, Others
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	-	-	-
Average Lead Time	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Shape: ST; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: -; Function: -; Working Frequency: -; Structure: -; Encapsulation Structure: Chip Transistor; Power Level: -; Material: Germanium;	Shape: GT; Shielding Type: Remote Cut-Off Shielding Tube; Cooling Method: Naturally Cooled Tube; Working Frequency: Overclocking; Structure: Alloy; Encapsulation Structure: Ceramic Packaged Transistor; Power Level: High Power; Material: Silicon; Brand Name: Original; Product Number: Sgh80n60ufd; Operating Temperature: Standard; Detailed Description: IGBT - 600 V 80 a 195 W Through Hole to-3p; Category: IGBT; IGBT Type: /;	Shape: DIP; Shielding Type: Sharp Cutoff Shielding Tube; Cooling Method: Air Cooled Tube; Working Frequency: High Frequency; Structure: Alloy; Encapsulation Structure: Ceramic Packaged Transistor; Power Level: High Power; Material: Iron and Plastic; Brand Name: Original; Product: Transistor; Subcategory: Igbts; Product Category: IGBT Transistors; Product Type: IGBT Transistor; Shipping by: DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post;	Product Type: Mosfet; Product Category: Mosfet; Description: Mosfet 800V N-CH Q-Fet Advance C-Series; Ds Breakdown Voltage-Min: 800 V; Configuration: Single with Built-in Diode; Polarity/Channel Type: N-Channel; Series: Fqpf8n80c;	Product Type: SCR; Current Rating: 8 a; Subcategory: Thyristor; Series: Tyn812; Product Category: SCR;
Supplier Name	Shenzhen Hongjilong Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.
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