Wholesale Original FUJI IGBT Module 2mbi800xne120-50 2mbi600xne120-50 pictures & photos

Wholesale Original FUJI IGBT Module 2mbi800xne120-50 2mbi600xne120-50

Contact Now

Get Latest Price

About this Item

Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$100.00

10+ Pieces US$90.00

Sepcifications

Certification RoHS, CE, ISO, CCC
Working Frequency High Frequency
Power Level High Power
Structure Planar
Transport Package Original Packaging
Specification Standard specifications
Origin Germany

Product Description

Product Description Product Description Quality:100% New Original Condition: 100% Original Selling Units:Single item 1. Note: Due to price changes, please refer to the latest price 2. Delivery terms: Within 4-35DAYS 3. Payment terms: 100% in advance by T/T. 4. Shipping terms: ...

Learn More

Xiamen Swill Intelligence Technology Co., Ltd.

Diamond Member Since 2023

Audited Supplier

Rating & Reviews： 5.0/5.0

(2 Reviews)

Business Type Manufacturer/Factory, Trading Company
Main Products PLC Module, Servo Motor, Frequency Converter, Step Motor, Circuit Breaker, Sensor, Transformer
Registered Capital 5880000 RMB
Plant Area 101~500 square meters
Management System Certification ISO 9001, ISO 9000, ISO 14000, IATF16949, GMP, HACCP, GAP, BREEAM, QSR, LEED
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: one month

IGBT Module Comparison

	Wholesale Original FUJI IGBT Module 2mbi800xne120-50 2mbi600xne120-50 Contact Now	Original Ixtq88n30p N-Channel 300V 88A (Tc) 600W (Tc) Mosfet Transistor 88n30 Bom Service Contact Now	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	Original Irfu9024pbf P-Channel 60 V 8.8A (Tc) 2.5W (Ta) , 42W (Tc) Mosfet Transistor Irfu9024 (We provide Bom service PCB PCBA) Contact Now	Quick View Original Transistors Mmbt4403 Sot-23 Plastic-Encapsulate Transistors Contact Now

Transaction Info
	Wholesale Original FUJI IGBT Module 2mbi800xne120-50 2mbi600xne120-50 Contact Now	Original Ixtq88n30p N-Channel 300V 88A (Tc) 600W (Tc) Mosfet Transistor 88n30 Bom Service Contact Now	Original Ksd1691ystu Bipolar (BJT) Transistor NPN 60V 5A 1.3W Ksd1691 (We provide Bom service PCB PCBA) Contact Now	Original Irfu9024pbf P-Channel 60 V 8.8A (Tc) 2.5W (Ta) , 42W (Tc) Mosfet Transistor Irfu9024 (We provide Bom service PCB PCBA) Contact Now	Quick View Original Transistors Mmbt4403 Sot-23 Plastic-Encapsulate Transistors Contact Now
Price	US $ 90.00-100.00/ Piece	US $ 1/ Piece	US $ 0.05/ Piece	US $ 0.3/ Piece	US $ 0.007-0.008/ Piece
Min Order	1 Pieces	100 Pieces	100 Pieces	100 Pieces	3000 Pieces
Trade Terms	-	-	-	-	-
Payment Terms	T/T	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, Western Union, Paypal	T/T, D/P, Western Union, Paypal
Quality Control
Product Certification	RoHS, CE, ISO, CCC	RoHS	RoHS	RoHS	RoHS, CE, ISO, CCC
Management System Certification	ISO 9001, ISO 9000, ISO 14000, IATF16949, GMP, HACCP, GAP, BREEAM, QSR, LEED	GMP	GMP	GMP	ISO 9001
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	OEM	OEM	OEM	-
Average Lead Time	Off-season: 1 Month(s) Peak-season: within 15 Day(s)	-	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)
Product Attributes
Specification	Working Frequency: High Frequency; Power Level: High Power; Structure: Planar;	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Fet Type: N-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 300 V; Current - Continuous Drain (ID) @25c: 88A (Tc); RDS on (Max) @ ID, Vgs: 40mohm @ 44A, 10V; Vgs(Th) (Max) @ ID: 5V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 180 Nc @ 10 V; Input Capacitance (CISS) (Max) @ Vds: 6300 PF @ 25 V; Power - Max: 600W (Tc);	Encapsulation Structure: DIP; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Transistor Polarity: NPN; Current - Collector (IC) (Max): 5 a; Voltage - Collector Emitter Breakdown (M: 60 V; Vce Saturation (Max) @ Ib, IC: 300mv @ 200mA, 2A; Current - Collector Cutoff (Max): 10µa (Icbo); DC Current Gain (Hfe) (Min) @ IC, Vce: 160 @ 2A, 1V; Power - Max: 1.3 W; Operating Temperature: 150°c (Tj);	Encapsulation Structure: Ceramic Packaged Transistor; Installation: Plug-in Triode; Power Level: Medium Power; Material: Silicon; Fet Type: P-Channel; Technology: Mosfet (Metal Oxide); Drain to Source Voltage (Vdss): 60 V; Current - Continuous Drain (ID) @25c: 8.8A (Tc); RDS on (Max) @ ID, Vgs: 280mohm @ 5.3A, 10V; Vgs(Th) (Max) @ ID: 4V @ 250µa; Gate Charge (Qg) (Max) @ Vgs: 19 Nc @ 10 V; Input Capacitance (CISS) (Max) @ Vds: 570 PF @ 25 V; Power Dissipation (Max): 2.5W (Ta), 42W (Tc);	Encapsulation Structure: Plastic Sealed Transistor; Installation: SMD Triode; Structure: PNP;
Supplier Name	Xiamen Swill Intelligence Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Dulcimer Technology Co., Ltd.
Select All

Contact Now

Hot Search