1,561 Stability Power Igbt Semiconductor
results from35 suppliers
FF900r12ie4 High DC Stability Power IGBT Semiconductor with Positive Temperature Coefficient
- Configuration: Dual
- IC(Nom) / If(Nom): 900 a
- Technology: IGBT4
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
IGBT Power Module 1200V/900A 2 in one-package Short circuit capability Fetures Semiconductor Applications GD900HFA120C6S
- Certification: RoHS
- Power Level: Small Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Power Module 10μs short circuit capability 1200V/100A 2 in one-package Fetures SEMICONDUCTOR Applications GD100HFY120C1S
- Certification: RoHS
- Power Level: Small Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Power Module 10μs short circuit capability 1200V/300A 2 in one-package Fetures SEMICONDUCTOR Applications GD300HFX120C2S
- Certification: RoHS
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
High DC Blocking Stability Over Whole Lifetime Dd360n22K IGBT Module Electronic Component Power Block
- Configuration: Single
- IC Nom: 360 a
- Technology: IGBT
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Electronics Semiconductor Components IGBT China Manufacturer
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Silicon
- Package: to-220 220f 262 247 Ect.
- Application: Motor Drive, UPS, Photovoltaic
- Port: Shenzhen
FF450r33t3e3 IGBT3 and Emitter Controlled Diode Infineon Semiconductor Module
- Configuration: Dual
- Technology: IGBT3
- Features: Phase Leg
- Housing: Xhp™ 3
- Voltage Class Max: 3300V
- Manufacturing Technology: Optoelectronic Semiconductor
China Manufacturer Ipm 03n60 Electronics Semiconductor Components Sop-23h, DIP-23h
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Silicon
- Package: Sop-23h, DIP-23h
- Application: Variable Frequency Fan or Air Cleaner
- Model: 03n60
FF1000r17ie4 Semiconductor IGBT of Infineon Using on Power Transmission and Distribution
- Configuration: Dual
- IC(Nom) / If(Nom): 1000 a
- Technology: IGBT4
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
FF1400r12IP4 Extended Operation Temperature High DC Stability UL Recognized IGBT Module
- Configuration: Dual
- Technology: IGBT4
- Housing: Primepack™ 3
- Voltage Class Max: 1200V
- Qualification: Industrial
- Manufacturing Technology: Optoelectronic Semiconductor
FF650r17ie4 Half-Bridge Dual IGBT Module with Emitter Controlled 4 Diode
- Configuration: Dual
- Technology: IGBT4
- Housing: Primepack™ 2
- Voltage Class Max: 1200V
- Qualification: Industrial
- Manufacturing Technology: Optoelectronic Semiconductor
FF900r12IP4 High Short Circuit Capability, Self Limiting Short Circuit Current Diode IGBT for Traction
- Configuration: Dual
- IC(Nom) / If(Nom): 900 a
- Technology: IGBT4
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Hvic Ipm 07n60 Mosfet Electronic Components China Manufacturer
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Silicon
- Package: DIP-23h, Sop-23h
- Application: Variable Frequency Fan or Air Cleaner
- Model: 07n60
Dd360n22K 50 mm Rectifier Diode Module Single Electrically Insulated for Wind Energy Systems
- Configuration: Single
- IC Nom: 360 a
- Technology: IGBT
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Dd360n22K Short on Fail Diode Module with 2200 V in Pressure Contact Technology
- Configuration: Single
- IC Nom: 360 a
- Technology: IGBT
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Fz1500r33he3 Medium Voltage Drives Applications IGBT Diode of Infineon
- Configuration: Single Switch
- Technology: IGBT3
- Housing: Ihv B
- Qualification: Industrial ; Traction
- Voltage Class Max: 3300V
- Manufacturing Technology: Optoelectronic Semiconductor
FF1400r17IP4 Trenchstop IGBT4 for Wind and Motor Control and Drives
- Configuration: Dual
- IC(Nom) / If(Nom): 1400 a
- Technology: IGBT4
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Fz1000r33he3 Single Switch IGBT Module Solution for Traction and Industry Applications
- Configuration: Single
- Technology: IGBT3
- Qualification: Industrial, Traction
- Voltage Class Max: 3300V
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
Fz1200r33kf2c 1200A Diode IGBT Inverter Modules Infineon
- Configuration: Single Switch
- Technology: IGBT3-E3
- Housing: Ihv B
- Qualification: Industrial ; Traction
- Voltage Class Max: 3300V
- Manufacturing Technology: Optoelectronic Semiconductor
Good Price Electronics Ipm 15n60 DIP-24h China Manufacturer
- Manufacturing Technology: Discrete Device
- Type: N-type Semiconductor
- Material: Silicon
- Package: DIP-24h
- Application: Compressor, Low Power Frequency Converter
- Model: 15n60
Fz1500r33hl3 Self Limiting Short Curcuit Current IGBT Module with Alsic Base Plate for Increased Thermal Cycling Capability
- Configuration: Single Switch
- Technology: IGBT3
- Housing: Ihv B
- Voltage Class Max: 3300V
- Qualification: Industrial
- Manufacturing Technology: Optoelectronic Semiconductor
FF600r12ie4 Half-Bridge Dual IGBT Module with Fast Switching Chip
- Configuration: Dual
- Technology: IGBT4
- Housing: Primepack™ 2
- Qualification: Industrial
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
Ikw50n65eh5 High Speed 650 V, Hard-Switching IGBT with Rapid 1 Fast and Soft Anti-Parallel Diode
- Configuration: Hard-Switching
- Technology: IGBT Trenchstop™ 5
- Switching Frequency Minmax: 30kHz 100kHz
- Switching Frequency: Trenchstop™5 30-100kHz
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
FF650r17ie4 Electronic Component Infineon Motor Control Drives IGBT
- Configuration: Dual
- IC(Nom) / If(Nom): 650 a
- Technology: IGBT4
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
50 mm Rectifier Diode Module with 1600 V in Pressure Contact Technology
- Configuration: Rectifier Diode
- Housing: 50mm
- Vdrm / Vrrm [V]: 1600V
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Dd360n22K Electrically Insulated Baseplate Industrial Standard 360 a Module Diode
- Configuration: Single
- IC Nom: 360 a
- Technology: IGBT
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
Better Dynamic Stability IGBT Mkc Mhc 300A 600V-1800V Module
- Manufacturing Technology: Discrete Device
- Material: Compound Semiconductor
- Type: Intrinsic Semiconductor
- Package: SMD
- Signal Processing: Analog Digital Composite and Function
- Application: Motor Drives, Power Supply, Power Transmission
Automotive Applications Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: SMD
- Signal Processing: Digital
- Application: Television
50 mm Thyristor/Thyristor Module with 1600 V in Pressure Contact Technology
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: PGA(Pin Grid Array Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Temperature Measurement
Rectifier Diode 60 mm Power Block 2200 V, 700 a Module Are Designed and Assembled with High Reliable Pressure Contact Technology Using an Isolated Copper Base P
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: PGA(Pin Grid Array Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Commercial, Construction and Agricultural Vehicles
Dd175n34K Rectifier Diode 50 mm Power Block 3400 V, 175 a Module with High Reliable Pressure Contact Technology
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: PGA(Pin Grid Array Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Motor Control and Drives
Fz800r45kl3_B5 Ihv 4500V 800A 130mm Single Switch IGBT Module
- Manufacturing Technology: Optoelectronic Semiconductor
- Material: Element Semiconductor
- Type: N-type Semiconductor
- Package: PGA(Pin Grid Array Package)
- Signal Processing: Analog Digital Composite and Function
- Application: Motor Control and Drives,UPS
Ikcs12f60b2a IGBT Variable Frequency Speed Regulation Module Control Integrated Power System, Machine, Electric Motor
- shape: DIP
- Conductive Type: Standard
- Technics: IGBT Module
- Operating Supply Voltage: 12.5 V to 17.5 V
- Output Current: 12A
- Supply Current: 2.4 Ma
Oriental Semi DC-DC IGBT High Power Osg65r038hzf To247 Mosfet
- Description: Extremely Low Switching Loss
- Characteristics: Excellent Stability and Uniformity
- Applications: PC Power
- Industries: LED Lighting
- Type: Fast EV Charging Station
- Certification: ISO, TUV, RoHS
IGBT Modules VCES-1200V IC-300AHigh short circuit capability(10us) Low inductance MG300HF12TLC2
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Global IGBT Module for New Energy Vehicle (NEV) Aec-Q101 Qualified Moter Driver Osg65r038hzaf To247 Vds 650V R
- Type: Lead-acid Battery
- Rated Voltage: 3.6V
- Charging Voltage: 4.1V~4.2V
- Working Voltage: 3.6V~2.75V
- Charging Type: Constant Current
- Wet Shelf Life: 3~5Year
IGBT VCE-650V IC-30A VCE(SAT) IC=30A 1.95V fetures applications Positive temperature coefficient DGW30N65BTH
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-1200V IC-15A VCE(SAT) IC=15A 1.85V fetures applications Positive temperature coefficient DGW15N120CTL
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-10A Low switching losses Low inductance case High short circuit capability(10us) MG10P12E1
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-25A Low switching losses Low inductance case MG25P12E1A
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity