1,555 Stability Power Igbt Semiconductor
results from32 suppliers
IGBT VCE-650V IC-30A VCE(SAT) IC=30A 1.85V fetures applications Positive temperature coefficient DGW30N65CTL
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-200A Low Vce(sat) with Trench technology Low inductance MG200HF12TFC2
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-50A Low Vce(sat) with Planner technology High short circuit capability(10us) MG50P12E2
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-60A VCE(SAT) IC=60A 2.10V fetures applications High ruggedness, temperature stable DGW60N65BTH
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-100A Low inductance High short circuit capability(10us) fetures applications MG100HF12TFC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Battery Electric Vehicles (BEVs) The IGBT Module RoHS High Frequency Operations Super Si Oss65r340FF To220f Mosfet
- Type: Lead-acid Battery
- Rated Voltage: 3.6V
- Charging Voltage: 4.1V~4.2V
- Working Voltage: 3.6V~2.75V
- Charging Type: Constant Current
- Wet Shelf Life: 3~5Year
IGBT Modules VCES-1200V IC-75A Low Vce(sat) with Planner technology High short circuit capability(10us) MG75P12E2A
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
1700V 600A IGBT Module, E6 Package, with FWD High Short Circuit Capability Low Switching Loss NI600B17E6K4
- Certification: RoHS
- Structure: Planar
- Encapsulation Structure: E6
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Discrete Solar converters VCE 650V IC 50A VCE(SAT) IC=50A 1.60V Fetures Applications DGW50N65CTH2A
- Certification: RoHS
- Encapsulation Structure: other
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-1200V IC-75A VCE(SAT) IC=75A 2.00V fetures applications Positive temperature coefficient DGQ75N120CTH0D
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-25A Low switching losses Low inductance case MG25P12E1A
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Module for New Energy Vehicle High Frequency Operations Super Si Mosfet
- Certification: RoHS, ISO
- Encapsulation Structure: Plastic Sealed Transistor
- Installation: Plug-in Triode
- Working Frequency: High Frequency
- Power Level: Medium Power
- Function: Power Triode, Switching Triode
IGBT Modules VCES-1200V IC-400A Low switching losses Fast switching and short tail current fetures applications MG400HF12MRC2
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-50A Low inductance High short circuit capability(10us) fetures applications MG50HF12TLC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-CHANNEL IGBT Low gate charge VCE 650V IC 10A BVCES 650V VCESAT-typ(VGE=15V)1.5V Fetures Applications JT010N065SED/CED/FED/WED
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Features4: Built-in ESD Diode
- Application1: Switch Mode Power Supply (SMPS)
- Application2: Power Factor Correction (Pfc)
IGBT VCE-650V IC-75A VCE(SAT) IC=75A 1.65V fetures applications Positive temperature coefficient DGZ75N65CTH2A
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-150A Low inductance High short circuit capability(10us) fetures applications MG150HF12TLC1-1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-50A Low inductance High short circuit capability(10us) fetures applications MG50HF12TFC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-40A VCE(SAT) IC=40A 1.80V fetures applications Positive temperature coefficient DGW40N65CTL
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules Low inductance case Low Switching Losses IC 50A VCES 650V Fetures Applications MG50P065P3
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Features4: Built-in ESD Diode
- Application1: Switch Mode Power Supply (SMPS)
- Application2: Power Factor Correction (Pfc)
IGBT Power Module 10μs short circuit capability 1700V/600A 2 in one-package Fetures SEMICONDUCTOR Applications GD600HFX170C6S
- Certification: RoHS
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
- Features4: Built-in ESD Diode
- Application1: Switch Mode Power Supply (SMPS)
IGBT VCE-650V IC-30A VCE(SAT) IC=30A 1.95V fetures applications Positive temperature coefficient DGW30N65BTH
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Oriental Semi DC-DC IGBT High Power Osg65r038hzf To247 Mosfet
- Description: Extremely Low Switching Loss
- Characteristics: Excellent Stability and Uniformity
- Applications: PC Power
- Industries: LED Lighting
- Type: Fast EV Charging Station
- Certification: ISO, TUV, RoHS
IGBT VCE-650V IC-40A VCE(SAT) IC=40A 1.95V fetures applications Positive temperature coefficient DGW40N65CTH
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT VCE-650V IC-100A VCE(SAT) IC=100A 1.35V fetures applications Positive temperature coefficient DGW100N65CTS1D
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-150A Low Stray Inductance Ultra Low loss fetures applications MG150HF12MRC2
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-100A VCE(SAT) IC=100A 1.25V fetures applications Positive temperature coefficient DGW100N65CTL1D
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-35A Low switching losses Low inductance case High short circuit capability(10us) MG35P12E1A
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-300A High short circuit capability(10us) High speed IGBT in NPT technology MG300HF12LEC2
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-15A VCE(SAT) IC=15A 1.60V fetures applications Positive temperature coefficient DGP15N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-30A VCE(SAT) IC=30A 1.95V fetures applications Positive temperature coefficient DGW30N65CTH
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-1200V IC-40A VCE(SAT) IC=40A 1.85V fetures applications Positive temperature coefficient DGW40N120CTL
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-40A Low inductance High short circuit capability(10us) fetures applications MG40HF12LEC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-1200V IC-40A VCE(SAT) IC=40A 1.75V fetures applications Positive temperature coefficient DGW40N120CTL0D
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT VCE-650V IC-15A VCE(SAT) IC=15A 1.60V fetures applications Positive temperature coefficient DGB15N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-20A VCE(SAT) IC=20A 1.60V fetures applications Positive temperature coefficient DGB20N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-50A VCE(SAT) IC=50A 1.95V fetures applications Positive temperature coefficient DGW50N65BTH
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT VCE-650V IC-15A VCE(SAT) IC=15A 1.60V fetures applications Positive temperature coefficient DGF15N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-75A VCE(SAT) IC=75A 1.45V fetures applications Positive temperature coefficient DGW75N65CTS2A
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
N-CHANNEL IGBT Low gate charge VCE 650V IC 50A VCE(SAT) TYP=1.7V Fetures Applications TT050U065FB
- Certification: RoHS
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested