1,555 Stability Power Igbt Semiconductor
results from36 suppliers
1700V 450A IGBT Module, E6 Package, with FWD and NTC High Short Circuit Capability Low Switching Loss NI450B17E6K4
- Certification: RoHS
- Structure: Planar
- Encapsulation Structure: E6
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-75A Low Vce(sat) with Planner technology High short circuit capability(10us) MG75P12E2A
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-15A VCE(SAT) IC=15A 1.60V fetures applications Positive temperature coefficient DGB15N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-300AHigh short circuit capability(10us) Low inductance MG300HF12TLC2
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-100A Low inductance High short circuit capability(10us) fetures applications MG100HF12TFC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-15A Low switching losses Low inductance case fetures applications MG15P12P3
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-40ALow Collector - Emitter Saturation Voltage fetures applications DGW40N120CTLQ
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-10A Low switching losses Low inductance case High short circuit capability(10us) MG10P12P3
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-20A VCE(SAT) IC=20A 1.60V fetures applications Positive temperature coefficient DGB20N65CTL0
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-50A VCE(SAT) IC=50A 1.60V fetures applications Positive temperature coefficient DGW50N65CTH2A
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-75A High speed IGBT in NPT technology Low inductance fetures applications MG75HF12LEC1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-40A Low switching losses Low inductance case High short circuit capability(10us) MG40P12E1
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-35A Low switching losses Low inductance case fetures applications MG35P12P3-1
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Discrete Solar converters VCE 650V IC 50A VCE(SAT) IC=50A 1.60V Fetures Applications DGW50N65CTH2A
- Certification: RoHS
- Encapsulation Structure: other
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT Modules VCES-1200V IC-10A Low switching losses Low inductance case High short circuit capability(10us) MG10P12E1
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-650V IC-40A VCE(SAT) IC=40A 1.80V fetures applications Positive temperature coefficient DGW40N65CTL
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-25A Low switching losses Low inductance case fetures applications MG25P12P3
- Encapsulation Structure: merry
- Application: Automobile
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
N-CHANNEL IGBT Low gate charge VCE 1100V IC 30A VCESAT-TYP(VGE=15V) 1.7V Fetures Applications JT030N110WED
- Certification: RoHS
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT VCE-650V IC-75A VCE(SAT) IC=75A 1.45V fetures applications Positive temperature coefficient DGW75N65CTS2A
- Certification: RoHS
- Function: Switch Transistor
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules 1200V/200A 2 in one-package Low inductance case Fetures Applications GD200HFX120C2S
- Certification: RoHS
- Power Level: High Power
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
- Features3: 100% Avalanche Tested
IGBT Modules VCES-1200V IC-50A Low Vce(sat) with Planner technology High short circuit capability(10us) MG50P12E2
- Encapsulation Structure: merry
- Application: Electronic Products
- Certification: RoHS
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
IGBT VCE-1200V IC-75A VCE(SAT) IC=75A 1.85V fetures applications Positive temperature coefficient DGQ75N120CTL0D
- Certification: RoHS
- Function: Switch Transistor
- Encapsulation Structure: Merry
- Material: Silicon
- Features1: Extremely Low Switching Loss
- Features2: Excellent Stability and Uniformity
Customized Semiconductor Thin Parts 96% 99% White Aluminum Oxide Alumina Laser Scribing Ceramic Substrate Manufacturer
- Application: Structure Ceramic, Industrial Ceramic
- Purity: 99%
- Type: Alumina Ceramic Plate
- Color: White
- Working Temperature: 1380-1650degree Centigrade
- Surface Finish: Mirror Polishing
Industrial Uninterrupted Power Supply Low Frequency UPS 100k-400kVA
- Phase: Three Phase
- Type: On-line
- Protection: Short Circuit
- Application: Communication
- Classification: Lighting/Power
- Standby Time: Standard Machine
White Customized Size Industry Special-Shaped Preservative Al2O3 Plate Wear Resistant Sheet Alumina Ceramic Disc
- Application: Structure Ceramic, Industrial Ceramic
- Material: Alumina Ceramic
- Type: Ceramic Plates
- Density: 3.6-3.9g/cm3
- Alumina Content: 99.7%
- Color: White
IGBT Module for New Energy Vehicle RoHS Extremely Fast Switching High Frequency Operations Super Si Oss65r340FF To220f Mosfet Semiconductor
- Type: Lead-acid Battery
- Rated Voltage: 3.6V
- Charging Voltage: 4.1V~4.2V
- Working Voltage: 3.6V~2.75V
- Charging Type: Constant Current
- Wet Shelf Life: 3~5Year
Industrial 150K Big UPS Low Frequency Online UPS Online UPS with 12 Language Display Screens
- Phase: Three Phase
- Type: On-line
- Protection: Overvoltage
- Application: Communication
- Classification: Lighting/Power
- Standby Time: Standard Machine
Oriental Semi DC-DC IGBT High Power Osg65r038hzf To247 Mosfet
- Description: Extremely Low Switching Loss
- Characteristics: Excellent Stability and Uniformity
- Applications: PC Power
- Industries: LED Lighting
- Type: Fast EV Charging Station
- Certification: ISO, TUV, RoHS
Clean UPS Power Supply with Isolation Transformer 10-400kVA for Hospital ICU CT Dsa Nmr and Color Doppler Imagining
- Phase: Three Phase
- Type: On-line
- Protection: Short Circuit
- Application: Industry
- Classification: Lighting/Power
- Standby Time: Long-acting Machine
Battery Electric Vehicles (BEVs) The IGBT Module Third Generation High Frequency Operations Oss65r340FF To220f Mosfet Super Si Semiconductor
- Type: Lead-acid Battery
- Rated Voltage: 3.6V
- Charging Voltage: 4.1V~4.2V
- Working Voltage: 3.6V~2.75V
- Charging Type: Constant Current
- Wet Shelf Life: 3~5Year
Intelligent LCD Digital Control Double Conversion Online UPS 380/400 VAC for Large Data Control Rooms
- Phase: Three Phase
- Type: On-line
- Protection: Short Circuit
- Application: Industry
- Classification: Lighting/Power
- Standby UPS: Sine Wave Output UPS
Induction Converters To247-P 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Transistor
- Application: Solar Cell
- Batch Number: 2010+
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Model: PC817
- Package: PGA(Pin Grid Array Package)
Uninterruptible Power Supplies To247-P 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Mosfet
- Application: Temperature Measurement
- Batch Number: 2010+
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Model: ST
- Package: DIP(Dual In-line Package)
DSP Control Online 300kVA UPS for Extruder Machine China OEM UPS Factory
- Phase: Three Phase
- Type: On-line
- Protection: Short Circuit
- Application: Industry
- Classification: Lighting/Power
- Standby Time: Long-acting Machine
To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
- Application: Temperature Measurement
- Batch Number: 2010+
- Manufacturing Technology: Discrete Device
- Material: Element Semiconductor
- Model: ULN2003
- Package: DIP(Dual In-line Package)
Triphase 300kVA Double Conversion Online UPS with Long Backup for Extruder Machine
- Phase: Three Phase
- Type: On-line
- Protection: Unbalanced Loads
- Application: Defence
- Classification: Lighting/Power
- Standby Time: Long-acting Machine
Excellent Conduction and Switching Loss To247-F 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Transistor
- Application: Solar Cell
- Batch Number: 2010+
- Manufacturing Technology: Integrated Circuits Device
- Material: Element Semiconductor
- Model: ST
- Package: SMD
V/F Vectorfrequency Converter AC Drive Inversor Speed Controller VFD Power Frequency Inverter
- Application: High-performance Transducer, Three Phase Transducer, General Transducer, Single-phase Transducer, High Frequency Converter Transducer
- Output Type: Triple
- Principle of Work: Vector and V/F
- Switch Mode: PWM Control
- Main Circuit Type: Voltage/Current
- Voltage of Power Supply: Low Voltage Variable-Frequency Drive
High Frequency Induction Heating Machine for Melting Welding Forging
- Type: Induction Heating Machine
- Certificate: ISO9001:2008
- Cooling System: Cooling Water
- Cooling Water: >0.2MPa 2-5L/Min
- Frequency: 30-100kHz
- G.W.: 31kg
V/F Mini MD380 Inversor VSD for HVAC Speed Controller VFD AC Power VSD Individual Inverter
- Application: High-performance Transducer, Three Phase Transducer, General Transducer, Single-phase Transducer, High Frequency Converter Transducer
- Output Type: Triple
- Principle of Work: Vector and V/F
- Switch Mode: PWM Control
- Main Circuit Type: Voltage/Current
- Voltage of Power Supply: Low Voltage Variable-Frequency Drive