High Voltage Diode Hvnt300 30kv 20mA

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Price

Min. Order Reference FOB Price

1000 Pieces US$1.00-3.00 / Piece

Sepcifications

Application Diode, Rectification
Batch Number 2010+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Hvnt300
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package 200 PCS in One Bag, 25 Bags in One Carton
Trademark Leadsun
Origin Anshan China
Trr 80ns
Tj -40~+150
Features Fast Recovery
Used X-ray Test Equipment
Brand Leadsun

Product Description

HVNT300 high voltage diodes adopt the designing of high reliable multiple mesa structure and Silicon tube, molded in small volume and compact packaging surface by epoxy resin. Product Description Features: Fast recovery Low forward on pressure, low leakage current Protection of avalanche ...

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Anshan Leadsun Electronics Co., Ltd.

Gold Member Since 2014

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products High Voltage Diode
Number of Employees 24
Year of Establishment 2001-07-10
Management System Certification ISO9001:2015
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

High Voltage Diode Comparison

	High Voltage Diode Hvnt300 30kv 20mA Contact Now	Quick View Japanese Quality 6/8/12 Inch Film/Dummy/Test Silicon Wafer Contact Now	255nm 254nm Light-Emitting-Diode 6868 UVC Contact Now	Quick View 300mm 12inch Silicon Polished Wafer Semiconductor Dummy/Test Wafer Monocrystalline Silicon Wafer Contact Now	Quick View 12 Inch Polished P Type Single Crystal Dummy Silicon Wafer Contact Now

Transaction Info
	High Voltage Diode Hvnt300 30kv 20mA Contact Now	Quick View Japanese Quality 6/8/12 Inch Film/Dummy/Test Silicon Wafer Contact Now	255nm 254nm Light-Emitting-Diode 6868 UVC Contact Now	Quick View 300mm 12inch Silicon Polished Wafer Semiconductor Dummy/Test Wafer Monocrystalline Silicon Wafer Contact Now	Quick View 12 Inch Polished P Type Single Crystal Dummy Silicon Wafer Contact Now
Price	US $ 1.00-3.00/ Piece	US $ 25/ pc	US $ 1/ Piece	US $ 25/ pc	US $ 25/ pc
Min Order	1000 Pieces	50 pc	10 Pieces	50 pc	50 pc
Trade Terms	-	-	-	-	-
Payment Terms	T/T, Western Union	T/T, Paypal	L/C, T/T, D/P, Western Union, Paypal, Money Gram	T/T, Paypal	T/T, Paypal
Quality Control
Management System Certification	ISO 9001	ISO 29001	ISO 9001	ISO 29001	ISO 29001
Trade Capacity
Export Markets	North America, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Domestic	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	North America, South America, Eastern Europe, Southeast Asia, Oceania, Mid East, Eastern Asia, Western Europe	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	-	-	OEM, ODM, Own Brand	-	-
Average Lead Time	-	-	Off-season: within 15 Day(s) Peak-season: within 15 Day(s)	-	-
Product Attributes
Specification	Application: Diode, Rectification; Batch Number: 2010+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Hvnt300; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Trr: 80ns; Tj: -40~+150; Features: Fast Recovery; Used: X-ray Test Equipment; Brand: Leadsun;	Application: Equipment; Batch Number: Na; Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Model: Custimize; Package: Semi Standard; Signal Processing: Na; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm; Brand: Fsm;	Application: Diode, Detection; Batch Number: 2023+; Manufacturing Technology: Optoelectronic Semiconductor; Material: Compound Semiconductor; Model: Gl255-6868h4; Package: DIP(Dual In-line Package); Signal Processing: No; Type: P-Type Semiconductor; Wavelength: 255nm; Package Type: 6868; Current: 100mA; Volatge: 20-30V; Angle: 120d; Brand: Mrleds;	Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm;	Application: Equipment; Batch Number: Na; Manufacturing Technology: Integrated Circuits Device; Material: Compound Semiconductor; Model: Custimize; Package: Semi Standard; Signal Processing: Na; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Frront Side: Polished; Edge: Polished; Diameter: 300±0.2mm; Thickness: 775±25μm; Brand: Fsm;
Supplier Name	Anshan Leadsun Electronics Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Changsha Greenergy lighting Co.,Limited	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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